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High-quality nano spin-oxide for possible applications in metal–oxide semiconductor field-effect transistor

High-quality nano spin-oxide for possible applications in metal–oxide semiconductor field-effect transistor

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Nano silicon dioxide (SiO2) has been deposited on silicon substrate using spin-coating method and Al/nano-SiO2/n-Si metal–oxide semiconductor (MOS) capacitors have been fabricated to characterise their electrical properties using current–voltage (IV) and capacitance–voltage (CV) measurements. Field-emission scanning electron microscope shows the spin-oxide with grain size ranging 50–60 nm. For as-formed spin-oxide, a large leakage current density of 5.14×10−5 cm−2 under 5 MV/cm field and fixed oxide charge density of 3.9×1012 cm−2 are obtained. After annealing at 500°C in N2 environment for 30 min, the leakage current and fixed oxide charge density are drastically reduced to 4.3×10−10 A/cm2 and 9×1011 cm−2, respectively. Such a large improvement, by five orders, in leakage current density demonstrates that the prepared nano spin-oxide exhibits a potential application in fabricating high-quality MOS field-effect transistor.

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