Synthesis of p-type ZnSe nanowires by atmosphere compensating technique

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Synthesis of p-type ZnSe nanowires by atmosphere compensating technique

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The atmosphere compensating technique with an individual selenium source is, first, used in the growth of phosphorus-doped p-type ZnSe nanowires. The morphology and structure characterisations reveal that the as-synthesised ZnSe nanowires have a wurtzite structure with a diameter of about 160 nm, a growth direction of [001]. The electrical properties’ characterisations demonstrate that the selenium atmosphere compensation technique assisted with phosphorus-doping leads to a substantial action in p-type conductivity of ZnSe nanowires with a high mobility of 1.25 cm2 V−1 S−1 and carrier concentration of 1.47×1018 cm−3. The photoluminescence measurements show a dominant emission and two donor–acceptor pair emission.

Inspec keywords: photoluminescence; carrier mobility; nanofabrication; phosphorus; nanowires; II-VI semiconductors; zinc compounds; carrier density; electrical conductivity; semiconductor doping; semiconductor quantum wires

Other keywords: selenium source; selenium atmosphere compensation technique; nanowire structure; donor-acceptor pair emission; ZnSe:P; wurtzite structure; p-type conductivity; p-type ZnSe nanowire synthesis; nanowire morphology; photoluminescence measurements; atmosphere compensating technique; carrier concentration; carrier mobility; phosphorus doped p-type ZnSe nanowires; electrical properties

Subjects: Semiconductor superlattices, quantum wells and related structures; Doping and implantation of impurities; Luminescent materials; Low-dimensional structures: growth, structure and nonelectronic properties; Optical properties of II-VI and III-V semiconductors (thin films, low-dimensional and nanoscale structures); Photoluminescence in II-VI and III-V semiconductors; Nanometre-scale semiconductor fabrication technology; Electrical properties of II-VI and III-V semiconductors (thin films, low-dimensional and nanoscale structures); Methods of nanofabrication and processing; Low-field transport and mobility; piezoresistance (semiconductors/insulators); Semiconductor doping

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