Design of a ternary static memory cell using carbon nanotube-based transistors
Design of a ternary static memory cell using carbon nanotube-based transistors
- Author(s): K. You and K. Nepal
- DOI: 10.1049/mnl.2011.0168
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- Author(s): K. You 1 and K. Nepal 1
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View affiliations
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Affiliations:
1: Department of Electrical Engineering, Bucknell University, Lewisburg, USA
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Affiliations:
1: Department of Electrical Engineering, Bucknell University, Lewisburg, USA
- Source:
Volume 6, Issue 6,
June 2011,
p.
381 – 385
DOI: 10.1049/mnl.2011.0168 , Online ISSN 1750-0443
In this Letter, the authors investigate the use of carbon nanotube-based field effect transistors (CNTFET) for the design of a ternary static random access memory (SRAM). The authors consider two designs – one using 8 transistors and the other using 14 transistors. Using circuit simulation models for CNTFETs, the authors show that both designs produce a functional ternary SRAM cell. The authors also measure the delay and power of the read-and-write operation of the ternary SRAM created using both models and show that the delays are comparable.
Inspec keywords: power measurement; field effect transistors; SRAM chips; circuit simulation; carbon nanotubes
Other keywords:
Subjects: Memory circuits; Fullerene, nanotube and related devices; Insulated gate field effect transistors; Power and energy measurement; Computer-aided circuit analysis and design
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