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Optimal materials and process conditions of functional layers for piezoelectric MEMS process at high temperature

Optimal materials and process conditions of functional layers for piezoelectric MEMS process at high temperature

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Pb(Zr0.52Ti0.48)O3 (PZT) thick film-based micro-transducers demonstrate excellent piezoelectric performances. However, its powder-based film requires very high sintering temperature to obtain high density and good electromechanical properties of the active film. High processing temperature enables inter-diffusion or reaction between PZT active materials and Si-based substrate to result in device failure via volatilisation of PbO especially over 800°C. Therefore the preventive solution to this problem should be considered in fabricating silicon-based piezoelectric microdevices for the better performance. In this research, compatibility in the interface stability and adhesion between the layers of the overall integrated piezoelectric thick-film devices were thoroughly investigated for the successful application of the process at high temperature. The Pt (or PtOx)/TiO2/SiNx/Si substrate represented the best interfacial properties among various combinations of structural substrates, so this structure is highly recommended to integrated piezoelectric thick-film microelectromechanical system devices.

Inspec keywords: piezoelectric transducers; adhesion; piezoelectric thin films; micromechanical devices; microfabrication; lead compounds

Other keywords: thick film microtransducers; adhesion; integrated piezoelectric thick-film devices; high-processing temperature; functional layers; PtOx-TiO2-SiNx-Si; interface stability; Pt-TiO2-SiNx-Si; PZT; Si-based substrate; piezoelectric MEMS process; Si

Subjects: Micromechanical and nanomechanical devices and systems; Piezoelectric devices; Materials for MEMS and NEMS device technology; Fabrication of MEMS and NEMS devices; Transducers

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