http://iet.metastore.ingenta.com
1887

Interfacial polarisation on gallium arsenide membranes

Interfacial polarisation on gallium arsenide membranes

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Micro & Nano Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

An investigation on the dielectric properties of gallium arsenide membranes is presented. Particularly, the authors exploit the interfacial polarisation effect of microstrip and coplanar transmission lines on multilayered membrane structures. Such structures are in favour with the Maxwell–Wagner polarisation, which can be used for resembling the dielectric characteristics of high-k materials. The authors demonstrate a technique for attaining large slowing factors while the corresponding dielectric losses are significantly reduced.

References

    1. 1)
      • P. Ladbrooke . (1989) MMIC design: GaAs FETS and HEMTs.
    2. 2)
      • H.A. Kramers . La diffusion de la lumiere par les atomes. Trans. Volta Centenary Congress, Atti Cong. Intern. Fisica , 545 - 557
    3. 3)
      • H. Hasegawa , M. Furukawa , H. Yanai . Properties of microstrip line on si-sio2 system. IEEE Trans. Microw. Theory Tech. , 869 - 881
    4. 4)
      • W.F. Croydon , E.H.C. Parker . (1981) Dielectric films on gallium arsenide.
    5. 5)
      • Prodromakis, T.: `Application of Maxwell–Wagner polarisation in monolithic technologies', December 2008, PhD, University of London, Imperial College London, London, UK.
    6. 6)
      • R. Ding , H. Wang . Microstructure and optical properties of GaAs/SiO2nanogranular films prepared by magnetron co-sputtering. Mater. Chem. Phys. , 841 - 845
    7. 7)
      • T. Prodromakis , C. Papavassiliou . Surface texturing for Maxwell-Wagner polarisation engineering. IET Micro Nano Lett. , 5 - 8
    8. 8)
      • T. Prodromakis , C. Papavassiliou . Engineering the Maxwell-Wagner polarization effect. Appl. Surf. Sci. , 6989 - 6994
http://iet.metastore.ingenta.com/content/journals/10.1049/mnl.2010.0008
Loading

Related content

content/journals/10.1049/mnl.2010.0008
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address