Low-frequency noise and hysteresis in graphene field-effect transistors on oxide

Low-frequency noise and hysteresis in graphene field-effect transistors on oxide

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The authors report measurements of low-frequency noise and hysteresis in graphene monolayer and bilayer field-effect transistors (FETs) fabricated on 90 and 290 nm oxidised silicon substrates. The authors observe hysteresis induced by stressing the oxide up to fields of 2 MV/cm and have characterised the hysteresis against stress time and sample temperature. Low-frequency current noise with a 1/f2 spectral density arises from the drift of neutrality point voltage, and subsequent drift of graphene FET channel current. A simple model of charge trapping at the graphene–oxide interface and thermally activated ion motion accounts for the temperature dependence of the observed hysteresis.


    1. 1)
    2. 2)
      • The rise of graphene
    3. 3)
      • Detection of individual gas molecules adsorbed on graphene
    4. 4)
      • Operation of graphene transistors at gigahertz frequencies
    5. 5)
      • Meric, I., Baklitskaya, N., Kim, P., Shepard, K.L.: `RF performance of top-gated, zero-bandgap graphene field-effect transistors', IEEE Electron Devices Meeting, 2008, p. 1–4
    6. 6)
      • Nonvolatile switching in graphene field-effect devices
    7. 7)
      • Ultrahigh electron mobility in suspended graphene
    8. 8)
      • Shot noise in ballistic graphene
    9. 9)
      • Shot noise in graphene
    10. 10)
      • Strong suppression of electrical noise in bilayer graphene nanodevices
    11. 11)
      • Low-noise top-gate graphene transistors
    12. 12)
      • Resistance noise in electrically biased bilayer graphene
    13. 13)
      • Ultralow noise field-effect transistor from multilayer graphene
    14. 14)
      • Flicker noise in bilayer graphene transistors
    15. 15)
      • Gate-controlled nonvolatile graphene-ferroelectric memory
    16. 16)
      • Ionic contamination and transport of mobile ions in MOS structures
    17. 17)
    18. 18)
      • Making graphene visible
    19. 19)
      • Counting graphene layers on glass via optical reflection microscopy
    20. 20)
      • The role of the oxygen/water redox couple in suppressing electron conduction in field-effect transistors
    21. 21)
      • The mobility of Na+, Li+ and K+ ions in thermally grown SiO2 films

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