Virtual prototype and GaN HEMT based high frequency LLC converter design

Long Xiao; Liang Wu; Jun Zhao; Guozhu Chen

Virtual prototype and GaN HEMT based high frequency LLC converter design

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Author(s): Long Xiao¹ ; Liang Wu¹ ; Jun Zhao¹ ; Guozhu Chen¹
- Affiliations: 1: College of Electrical Engineering, Zhejiang University , Hangzhou 310027 , People's Republic of China
Source: Volume 2019, Issue 7, July 2019, p. 4672 – 4674
DOI: 10.1049/joe.2019.0081 , Online ISSN 2051-3305

This is an open access article published by the IET under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0/)

Received 25/01/2019, Accepted 01/03/2019, Published 21/03/2019

Gallium nitride (GaN) high-electron-mobility transistor (HEMT) with the merits of the fast switch speed, low on resistance and low switch loss is applicable to high-frequency LLC converters. However, voltage stress and ringing problems during the fast switching transient have retarded the promotion of switch speed and prolonged the design cycles. This study proposed an economic and time-saving virtual prototype based LLC converter design method, based on which the voltage stress and ringing problem can be analysed and suppressed by iteration design. The virtual prototype comprises of compact GaN HEMT device model and accurate circuit model. The correctness and effectiveness of the virtual-prototype-based design method is verified with well matching simulation and experiment waveforms.

References

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Virtual prototype and GaN HEMT based high frequency LLC converter design

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