access icon openaccess Implicit common-mode resonance by parasitic capacitances in LC oscillators for Ka-band satellite receiver

This is an open access article published by the IET under the Creative Commons Attribution-NonCommercial-NoDerivs License (http://creativecommons.org/licenses/by-nc-nd/3.0/)
Received 30/03/2019, Accepted 04/07/2019, Published 30/08/2019

Parasitic capacitances in high frequency have a significant role in examining the inductor-capacitor tank oscillators (LC oscillators) output signal quality. Here, the authors proposed a new idea for Ka-band satellite receiver oscillator, which considers these parasitic elements, in order to maintain a specific precise frequency where there is no need for a broadband frequency range. By using tuned parasitic elements in differential LC oscillator to resonate the circuit's common mode at twice the oscillation frequency, a better phase noise performance and higher oscillator FOM can be achieved. The developed methodology is employed to design and fabricate an oscillator in 0.25 µm AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors process for 19.25 GHz oscillations.

Inspec keywords: satellite communication; gallium arsenide; indium compounds; LC circuits; microwave oscillators; microwave field effect transistors; III-V semiconductors; aluminium compounds; phase noise; radio receivers

Other keywords: implicit common-mode resonance; parasitic capacitances; higher oscillator FOM; differential LC oscillator; size 0.25 mum; AlGaAs-InGaAs; Ka-band satellite receiver; frequency 19.25 GHz; phase noise performance; tuned parasitic elements; pseudomorphic high-electron-mobility transistors process; Ka-band satellite receiver oscillator; LC oscillator output signal quality; twice the oscillation frequency; circuit common mode resonator; broadband frequency range; specific precise frequency

Subjects: Radio links and equipment; Other field effect devices; Oscillators; Solid-state microwave circuits and devices

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