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access icon openaccess Three-level GaN inverter with SiC diodes for a possible three-phase high power solution

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References

    1. 1)
      • 1. Ohashi, H.: ‘Research activities of the power electronics research centre with special focus on wide band gap materials’. Proc. 4th Int. Conf. on Integrated Power Systems, Naples, Italy, 2006, pp. 14.
    2. 2)
      • 2. Matsunami, H.: ‘State-of-the-art wide band-gap semiconductors for power electronic devices’. Proc. Int. Meeting for Future of Electron Devices, Kyoto, Japan, 2004, pp. 2122.
    3. 3)
      • 3. Pinkos, A.F., Guo, Y.: ‘Automotive design challenges for wide-band-gap devices used in high temperature capable, scalable power vehicle electronics’. Proc. IEEE EnergyTech, Cleveland, OH, 2013, pp. 15.
    4. 4)
      • 4. Degoutte, C., Sanchez, O., Renaudin, J., et al: ‘Aircraft 270VDC power distribution improvements using wide band gap semi- conductors’. Proc. Int. Conf. Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & Int. Transportation Electrification Conf., Toulouse, 2016, pp. 16.
    5. 5)
      • 5. Linov, B., Kosenko, R., Chub, A.: ‘Evaluation of low- and high-voltage GaN transistors in soft-switching DC-DC converter’. Proc. IEEE 1st Ukraine Conf. Electrical and Computer Engineering, Kiev, 2017, pp. 544547.
    6. 6)
      • 6. Xi, X., Liu, S., Kuang, J.: ‘Research of efficient DC–DC converter based on SiC power devices and ZVS soft switches’. Proc. 1st Int. Future Energy Electronics Conf., Tainan, 2013, pp. 194198.
    7. 7)
      • 7. Kurumatani, H., Katsura, S.: ‘GaN-HEMT-based three level T-type NPC inverter using reverse-conducting mode in rectifying’. Proc. IEEE 26th Int. Symp. Industrial Electronics, Edinburgh, 2017, pp. 19411946.
    8. 8)
      • 8. Anthon, A., Zhang, Z., Andersen, M.A.E., et al: ‘The benefits of SiC MOSFETs in a T-type inverter for grid-tie applications’, IEEE Trans. Power Electron., 2017, 32, (4), pp. 28082821.
    9. 9)
      • 9. Gurpinar, E., Castellazzi, A.: ‘Sic and GaN based BSNPC inverter for photovoltaic systems’. Proc. 17th European Conf. on Power Electronics and Applications, Geneva, 2015, pp. 110.
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