http://iet.metastore.ingenta.com
1887

access icon openaccess Insight into physics-based RRAM models – review

Loading full text...

Full text loading...

/deliver/fulltext/joe/2019/7/JOE.2018.5234.html;jsessionid=2iu3ltssrm73a.x-iet-live-01?itemId=%2fcontent%2fjournals%2f10.1049%2fjoe.2018.5234&mimeType=html&fmt=ahah

References

    1. 1)
      • 1. El-Hassan, N.H., Kumar, T.N., Almurib, H.A.F.: ‘Phase change memory cell emulator circuit design’, Microelectron. J., 2017, 62, (February), pp. 6571.
    2. 2)
      • 2. Chua, L.O.: ‘Memristor—the missing circuit element’, IEEE Trans. Circuit Theory, 1971, 18, (5), pp. 507519.
    3. 3)
      • 3. Xia, Q., Robinett, W., Cumbie, M.W., et al: ‘Memristor − CMOS hybrid integrated circuits for reconfigurable logic’, Nano Lett., 2009, 9, (10), pp. 36403645.
    4. 4)
      • 4. Strukov, D.B., Snider, G.S., Stewart, D.R., et al: ‘The missing memristor found’, Nature, 2008, 453, (7191), pp. 8083.
    5. 5)
      • 5. Fang, Z., Yu, H.Y., Li, X., et al: ‘Hfox/TiOx/HfOx/TiOx multilayer-based forming-free RRAM devices with excellent uniformity’, IEEE Electron Device Lett., 2011, 32, (4), pp. 566568.
    6. 6)
      • 6. Hatem, F.O., Ho, P.W.C., Kumar, T.N., et al: ‘Modeling of bipolar resistive switching of a nonlinear MISM memristor’, Semicond. Sci. Technol., 2015, 30, (11), p. 115009.
    7. 7)
      • 7. Kumar, D., Aluguri, R., Chand, U., et al: ‘Metal oxide resistive switching memory: materials, properties and switching mechanisms’, Ceramics Int., 2017, 43, pp. S547S556.
    8. 8)
      • 8. Saremi, M., Rajabi, S., Barnaby, H.J., et al: ‘The effects of process variation on the parametric model of the static impedance behavior of programmable metallization cell (PMC)’. Proc. Materials Res. Soc. Symp., San Francisco, USA, 2014, vol. 1692.
    9. 9)
      • 9. Saremi, M.: ‘A physical-based simulation for the dynamic behavior of photodoping mechanism in chalcogenide materials used in the lateral programmable metallization cells’, Solid State Ion., 2016, 290, pp. 15.
    10. 10)
      • 10. Saremi, M., Barnaby, H.J., Edwards, A., et al: ‘Analytical relationship between anion formation and carrier-trap statistics in chalcogenide glass films’, ECS Electrochem.Lett., 2015, 4, (7), pp. H29H31.
    11. 11)
      • 11. Saremi, M.: ‘Carrier mobility extraction method in ChGs in the UV light exposure’, Micro Nano Lett., 2016, 11, (11), pp. 762764.
    12. 12)
      • 12. Ho, P.W.C., Hatem, F.O., Almurib, H.A.F., et al: ‘Enhanced SPICE memristor model with dynamic ground’. Proc. Int. IEEE Circuits and Systems Symp. (ICSyS), Langkawi, Malaysia, 2015, pp. 130132.
    13. 13)
      • 13. Hatem, F.O., Kumar, T.N., Almurib, H.: ‘A SPICE model of the Ta2O5/TaOx Bi-layered RRAM’, IEEE Trans. Circuits Syst., 2016, 63, (9), pp. 14871498.
    14. 14)
      • 14. Hur, J.H., Lee, M.J., Lee, C.B., et al: ‘Modeling for bipolar resistive memory switching in transition-metal oxides’, Phys. Rev. B - Condensed Matter Mater. Phys., 2010, 82, (15), p. 155321.
    15. 15)
      • 15. Siemon, A., Menzel, S., Marchewka, A., et al: ‘Simulation of TaOx-based complementary resistive switches by a physics-based memristive model’. Proc. IEEE Int. Symp. Circuits Syst., Melbourne, Australia, 2014, pp. 14201423.
    16. 16)
      • 16. Chee, H.L., Kumar, T.N., Almurib, H.A.: ‘Multifilamentary conduction modelling of bipolar Ta2O5/TaOx Bi-layered RRAM’. Proc. 7th IEEE Non-Volatile Mem. Syst. Symp. (NVMSA), Hakodate, Japan, 2018, pp. 113114.
    17. 17)
      • 17. González-Cordero, G., Jiménez-Molinos, F., Roldán, J.B., et al: ‘In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures’, J. Vac. Sci. Technol. B, 2017, 35, (1), p. 01A110.
    18. 18)
      • 18. Ambrogio, S., Balatti, S., Gilmer, D.C., et al: ‘Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches’, IEEE Trans. Electron Devices, 2014, 61, (7), pp. 23782386.
    19. 19)
      • 19. Larentis, S., Nardi, F., Balatti, S., et al: ‘Resistive switching by voltage-driven ion migration in bipolar RRAM—part II: modeling’, IEEE Trans. Electron Devices, 2012, 59, (9), pp. 24682475.
    20. 20)
      • 20. Kim, S., Choi, S., Lu, W.: ‘Comprehensive physical model of dynamic resistive switching in an oxide memristor’, ACS Nano, 2014, 8, (3), pp. 23692376.
    21. 21)
      • 21. Zhao, Y., Huang, P., Chen, Z.: ‘Modeling and optimization of bilayered TaOx RRAM based on defect evolution and phase transition effects’, IEEE Trans. Electron Devices, 2016, 63, (4), pp. 15241532.
    22. 22)
      • 22. Huang, P., Liu, X.Y., Chen, B., et al: ‘A physics-based compact model of metal-oxide-based RRAM DC and AC operations’, IEEE Trans. Electron Devices, 2013, 60, (12), pp. 40904097.
    23. 23)
      • 23. Zhao, Y.D., Huang, P., Liu, C., et al: ‘Simulation of TaOX-RRAM with Ta2O5−X/TaO2−Xstack engineering’. Proc. Int. Conf. Simulation Semiconductor Processes Devices (SISPAD), Washington, DC., USA, October 2015, pp. 285288.
    24. 24)
      • 24. Li, H., Jiang, Z., Huang, P., et al: ‘Variation-aware, reliability-emphasized design and optimization of RRAM using SPICE model’. Proc. Des. Automation Test Europe Conf. Exhibition (DATE), Grenoble, France, 2015, pp. 14251430.
    25. 25)
      • 25. Jagath, A.L., Kumar, T.N., Almurib, H.A.F.: ‘Modeling of current conduction during RESET phase of Pt/Ta2O5/TaOx/Pt bipolar resistive RAM devices’. Proc. 7th IEEE Non-Volatile Mem. Syst. Appl. Symp. (NVMSA), Hakodate, Japan, 2018, pp. 5560.
    26. 26)
      • 26. Hur, J.H., Kim, K.M., Chang, M., et al: ‘Modeling for multilevel switching in oxide-based bipolar resistive memory’, Nanotechnology, 2012, 23, (22), p. 225702.
    27. 27)
      • 27. Kim, S., Kim, S-J., Kim, K.M., et al: ‘Physical electro-thermal model of resistive switching in bi-layered resistance-change memory’, Sci. Rep., 2013, 3, (1), p. 1680.
    28. 28)
      • 28. Bocquet, M., Deleruyelle, D., Aziza, H., et al: ‘Robust compact model for bipolar oxide-based resistive switching memories’, IEEE Trans. Electron Devices, 2014, 61, (3), pp. 674681.
    29. 29)
      • 29. Jiang, Z., Wu, Y., Yu, S., et al: ‘A compact model for metal-oxide resistive random access memory with experiment verification’, IEEE Trans. Electron Devices, 2016, 63, (5), pp. 18841892.
    30. 30)
      • 30. Larentis, S., Nardi, F., Balatti, S., et al: ‘Resistive switching by voltage-driven ion migration in bipolar RRAM—part i: experimental study’, IEEE Trans. Electron Devices, 2012, 59, (9), pp. 24682475.
    31. 31)
      • 31. Villena, M.A., Jiménez-Molinos, F., Roldán, J. B., et al: ‘An in-depth simulation study of thermal reset transitions in resistive switching memories’, J. Appl. Phys., 2013, 114, (14), p. 144505.
    32. 32)
      • 32. Graves, C.E., Dávila, N., Merced-Grafals, E.J., et al: ‘Temperature and field-dependent transport measurements in continuously tunable tantalum oxide memristors expose the dominant state variable’, Appl. Phy.Lett., 2017, 110, (12), p. 123501.
    33. 33)
      • 33. Simmons, J.: ‘Richardson-Schottly effects in solids’, Phys. Rev. Lett., 1965, 15, (25), pp. 967968.
    34. 34)
      • 34. Sze, S.M., Lee, M.K.: ‘Semiconductor devices: physics and technology’ (Wiley, Hoboken, 2012).
    35. 35)
      • 35. Chang, T., Jo, S.H., Kim, K.H., et al: ‘Synaptic behaviors and modeling of a metal oxide memristive device’, Appl. Phys. A Mater. Sci. Process., 2011, 102, (4), pp. 857863.
http://iet.metastore.ingenta.com/content/journals/10.1049/joe.2018.5234
Loading

Related content

content/journals/10.1049/joe.2018.5234
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address