access icon openaccess Impact of Al content on InAs/AlSb/Al x Ga1−x Sb tunnelling diode

A method to engineer the peak-to-valley ratio (PVR) by design of the epitaxial layers is presented. The impact of Al content on PVR of InAs/AlSb/Al x Ga1−x Sb tunnelling diode is studied. A simplified analytical model is used to explain the PVRs dependence on Al content. It was found that PVR reaches its maximum when Al content x is zero with a quantised InAs layer. The peak positions appeared in the negative differential region are effectively controlled by the applied gate bias. A PVR ratio as high as 7.1 was achieved, which is beneficial for a wide range of circuit applications. Adjusting Al content provides a new way to engineer the PVR as opposed to the conventional way of being optimised by varying barrier thicknesses or doping levels.

Inspec keywords: aluminium compounds; indium compounds; semiconductor doping; tunnel diodes

Other keywords: epitaxial layers; negative differential region; tunnelling diode; peak-to-valley ratio; quantised layer; diode barrier thicknesses; semiconductor doping levels; InAs-AlSb-AlxGa1−xSb

Subjects: Semiconductor device modelling, equivalent circuits, design and testing; Semiconductor doping; Junction and barrier diodes

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