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access icon openaccess MMC with parallel-connected MOSFETs as an alternative to wide bandgap converters for LVDC distribution networks

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References

    1. 1)
      • 1. Stanojevic, V., Bilton, M., Dragovic, J., et al: ‘Application of demand side response and energy storage to enhance the utilization of the existing distribution network capacity’. 22nd Int. Conf. and Exhibition on Electricity Distribution, Stockholm, Sweden, 2013, pp. 14.
    2. 2)
      • 2. Borioli, E., Brenna, M., Faranda, R., et al: ‘Comparison between the electrical capabilities of the cables used in LV AC and DC power lines’. 11th Int. Conf. on Harmonics and Quality of Power, 2004, pp. 408413.
    3. 3)
      • 3. Kaipia, T., Salonen, P., lassila, J., et al: ‘Possibilities of the low voltage DC distribution systems’. Proc. of NORDAC, Stockholm, August 2006.
    4. 4)
      • 4. Mattsson, A., Vaisanen, V., Nuutinen, P., et al: ‘Implementation design of the converter-based galvanic isolation for low voltage DC distribution’. Int. Power Electronics Conf. (ECCE-ASIA), Hiroshima, Japan, 2014, pp. 587594.
    5. 5)
      • 5. Amin, M., Arafat, Y., Lundberg, S., et al: ‘Low voltage DC distribution system compared with 230 V AC’. IEEE Electrical Power and Energy Conf. (EPEC), Winnipeg, Canada, 2011, pp. 340345.
    6. 6)
      • 6. Nilsson, D., Sannino, A.: ‘Efficiency analysis of low- and medium-voltage DC distribution systems’. IEEE Power Engineering Society General Meeting, Denver, CO, 2004, pp. 23152321.
    7. 7)
      • 7. Zhong, Y., Finney, S., Holliday, D.: ‘An investigation of high efficiency DC-AC converters for LVDC distribution networks’. Seventh IET Int. Conf. on Power Electronics, Machines and Drives (PEMD), Manchester, 2014, pp. 16.
    8. 8)
      • 8. Strbac, G., Gan, C.K., Aunedi, M., et al: ‘Benefits of advanced smart metering for demand response based control of distribution networks’. Summary Report, Imperial College London, April2010.
    9. 9)
      • 9. Chen, L., Zhang, Y.: ‘Model and harmonic control strategy of electric vehicle chargers connected with the power system’. 2011 IEEE Power Engineering and Automation Conf. (PEAM), 2011, pp. 524528.
    10. 10)
    11. 11)
      • 11. Delepaut, C., Siconolfi, S., Mourra, O., et al: ‘MOSFET gate open failure analysis in power electronics’. Applied Power Electronics Conf. and Exposition (APEC), May 2013.
    12. 12)
      • 12. Bogonez-Franco, P., Sendra, J.B.: ‘EMI comparison between Si and SiC technology in a boost converter’. EMC Europe, September 2012.
    13. 13)
      • 13. http://www.gansystems.com/_uploads/whitepapers/982304_GN001%20App%20Note%20-%20How%20to%20Drive%20GaN%20E-Mode%20Transistors%202014-10-21.pdf, accessed January 2017.
    14. 14)
      • 14. Mittal, N., Singh, B., Singh, S.P., et al: ‘Multilevel inverters: a literature survey on topologies and control strategies’. Second Int. Conf. on Power, Control and Embedded Systems (ICPCES), Allahabad, India, 2012, pp. 111.
    15. 15)
    16. 16)
    17. 17)
      • 17. Li, K.: ‘Wide Bandgap (SiC/GaN) power devices characterization and modeling: application to HF power converters’. PhD thesis, Lille University of Science and Technology, 2014.
    18. 18)
      • 18. Callanan, B.: ‘Application considerations for silicon carbide MOSFETs’ (CREE Inc, 2011).
    19. 19)
      • 19. ‘SiC Power Devices and Modules’, Application Note, ROHM Semiconductor, June 2013.
    20. 20)
    21. 21)
      • 21. She, X., Huang, A., Ni, X., et al: ‘AC circulating currents suppression in modular multilevel converter’. IECON 2012 - 38th Annual Conf. on IEEE Industrial Electronics Society, Montreal, Canada, 2012, pp. 191196.
    22. 22)
    23. 23)
      • 23. NationalGrid: ‘The grid code – connection conditions’, 22January2015.
    24. 24)
    25. 25)
      • 25. Zhong, Y.: ‘MOSFET-based MMC for low voltage DC distribution networks’. PhD thesis, University of Strathclyde, Glasgow, UK, 2016.
    26. 26)
      • 26. Zhong, Y., Holliday, D., Finney, S.J.: ‘High-efficiency MOSFET-based MMC for LVDC distribution systems’. IEEE Energy Conversion Congress and Exposition (ECCE), Montreal, Canada, 2015, pp. 66916697.
    27. 27)
      • 27. Roscoe, N.M., Zhong, Y., Finney, S.J.: ‘Comparing SiC MOSFET, IGBT and Si MOSFET in LV distribution inverters’. 41st Annual Conf. of the IEEE Industrial Electronics Society, Yokohama, Japan, 2015.
    28. 28)
    29. 29)
    30. 30)
      • 30. Ramachandran, R., Nymand, M.: ‘Switching losses in a 1.7 kW GaN based full-bridge DC–DC converter with synchronous rectification’. 17th European Conf. on Power Electronics and Applications (EPE'15 ECCE-Europe), Geneva, Switzerland, 2015, pp. 110.
    31. 31)
      • 31. ‘MOSFET Gate-Charge Origin and its Applications’, AND9083/D Application Note, ON Semiconductor.
    32. 32)
      • 32. http://www.api-capacitors.com/, accessed 20 September 2016.
    33. 33)
      • 33. DATENBLATT Ferritkern Data sheet ferrite core E160/80/40, BLINZINGER ELEKTRONIK GMBH, 2016.
    34. 34)
    35. 35)
    36. 36)
    37. 37)
      • 37. http://www.nxp.com/documents/technical_note/TN00008.pdf, accessed January 2017.
    38. 38)
      • 38. http://epc-co.com/epc/Portals/0/epc/documents/product-training/EPC_Phase_Five_Rel_Report.pdf, accessed January 2017.
    39. 39)
      • 39. Page, F., Adam, G., Finney, S., et al: ‘DC fault parameter sensitivity analysis’. DPSP 2014, March 2014.
    40. 40)
      • 40. Adam, G.P., Finney, S.J., Williams, B.W., et al: ‘Network fault tolerant voltage-source-converters for high-voltage applications’. Ninth IET Int. Conf. on AC and DC Power Transmission, March 2010.
    41. 41)
      • 41. Sawle, A., Woodworth, A.: ‘Mounting guidelines for the SUPER-220’, International Rectifier Application Note AN-1000, 2016.
    42. 42)
      • 42. IRFP4668PbF HEXFET Power MOSFET, Datasheet, International Rectifier.
    43. 43)
      • 43. ‘GS66508T-EVBHB 650 V GaN E-HEMT Half Bridge Evaluation Board User's Guide’, GaN Systems, 2015.
    44. 44)
      • 44. Li, X., Zhang, L., Guo, S., et al: ‘Understanding switching losses in SiC MOSFET: toward lossless switching’. IEEE Third Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2015, pp. 257262.
    45. 45)
      • 45. ‘Application Note AN-941: Paralleling Power MOSFETs’, International Rectifier.
    46. 46)
      • 46. Forsythe, J.B.: ‘Paralleling of power MOSFETs for higher power output’ (International Rectifier, E1 Segundo, California, 2000).
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