A1 Marco Frasca

A1 Alfonso Farina

A1 Hugh Griffiths

PB iet

T1 Effect of input noise on phase coherence in a lattice of memristors acting as a voltage divider

JN The Journal of Engineering

VO 2017

IS 3

SP 51

OP 56

AB It is known that Fibonacci numbers emerge from a network of voltage dividers comprising just resistors. The authors find that the same happens to a lattice of memristors as recently devised. Between the memristor dividers there is a phase coherence with respect to a sinusoidal input signal. Interestingly, they show that the effect of Gaussian distributed random noise, which adds to the voltage signal at the input of the memristor lattice, may affect the coherence. It is shown that when the signal-to-noise ratio goes below 3 dB and the number of dividers in the lattice is ten there is an abrupt reduction of phase coherence typical of non-linear systems. This behaviour does not happen with a lattice of normal resistors. A tolerance analysis of the classical resistor components as well as of the memristor parameters is also presented.

K1 Fibonacci numbers

K1 voltage signal

K1 input noise

K1 tolerance analysis

K1 memristor parameters

K1 normal resistor lattice

K1 memristor dividers

K1 classical resistor components

K1 Gaussian distributed random noise

K1 memristor lattice

K1 signal-to-noise ratio

K1 phase coherence

K1 voltage divider

K1 sinusoidal input signal

K1 nonlinear systems

DO https://doi.org/10.1049/joe.2016.0302

UL https://digital-library.theiet.org/;jsessionid=rrgquomlmdlf.x-iet-live-01content/journals/10.1049/joe.2016.0302

LA English

SN

YR 2017

OL EN