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access icon openaccess Highly sensitive 10 Gb/s PAM-4 optical receiver circuit for three-dimensional optoelectronic integration

This study presents a 0.35 µm silicon germanium bipolar complementary metal-oxide-semiconductor 10 Gb/s receiver circuit optimised for photonic–electronic three-dimensional integration. Measurements were conducted on a test-chip with a voltage-input signal, which was converted to a current via a series resistor. On the basis of measurement results and using the expected value of the photodetector responsivity of 1 A/W, the PAM-4 circuit consumes 145 mW, sensitivity is −21.8 dBm at 10 Gb/s, and at a bit error rate = 10−9.

http://iet.metastore.ingenta.com/content/journals/10.1049/joe.2016.0242
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content/journals/10.1049/joe.2016.0242
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