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Spice modelling of PCRAM devices

Spice modelling of PCRAM devices

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Approaches to producing SPICE models for phase-change RAM devices are discussed. Alternative models based around the lumped parameter approach, which vary in complexity, are compared. Consequently the PSpice models for the PCRAM are presented and evaluated for the steady state mode of the device operation.

References

    1. 1)
      • Ovshinsky, S.: `An History of the Phase Change Technology', Research Report ECD Ovonics, .
    2. 2)
      • Ovshinsky, S.: ‘Technical Presentation: Ovonic Unified Memory’, Ovonyx Inc., www.ovonyx.com/technology.pdf, Dec 1999.
    3. 3)
      • Lai, S., Lowry, T.L.: `OUM – A 180 nm Nonvolatile Memory Cell Element Technology For Stand Alone and Embedded Applications', Proc. International electron devices meeting (IEDM), 2–5 December 2001, Washington, DC, p. 36.5. 1–4.
    4. 4)
      • P.W. Tuinega . (1988) Spice: A Guide to Circuit Simulation & Analysis Using Pspice.
    5. 5)
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    8. 8)
      • T.L. Floyd . (1999) Electronics Fundamentals: Circuits Devices, and Applications.
    9. 9)
      • M.H. Rashid . (1993) Power Electronics Circuits Devices and Applications.
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