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Measurements of the slopes (ΔI/ΔVg)n of the acoustoelectric current plateaux In=nef for n=1 and 2 have been made, as a function of the bath temperature T in the range 0.3 to 4.2 K. Electrons, constrained in one-dimensional channels, are transported by a surface acoustic wave of frequency f≈2.8 GHz, generated by transducers deposited on a GaAs heterostructure. The channel width is controlled by the application of voltages Vg to Schottky gates also deposited on the heterostructure. The normalised slopes S=(ΔI/ΔVg)n/(ΔI/ΔVg)n−1→n are compared with those calculated using a model describing the device behaviour proposed by Flensberg et al. In this model S is related to an effective temperature Teff, which can be greater than T. The measurements indicate that for n=1, Teff has a minimum value of 1.65±0.1 K corresponding to a minimum value of S≈10−3.
Inspec keywords: measurement standards; single electron devices; surface acoustic wave devices; active networks; temperature; constant current sources; acoustic charge transport devices
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Subjects: Measurement standards and calibration; Measurement standards and calibration; Active filters and other active networks; Transduction; devices for the generation and reproduction of sound; Acoustic wave devices; Quantum interference devices