http://iet.metastore.ingenta.com
1887

Optimisation of high power AlGaInP laser diodes for optical storage applications

Optimisation of high power AlGaInP laser diodes for optical storage applications

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
IEE Proceedings - Optoelectronics — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The use of expanded mode layers in lasers designed for DVD read/write applications is investigated and their performance is compared with that of a more conventional structure. The expanded mode design achieves a higher confinement factor and hence much lower threshold currents than the conventional structure, for the same measured vertical farfield divergence of 18°. T0 is increased from 51 to 65 K (20–70°C) for the expanded mode structure for 320-µm long devices with uncoated facets. It is also found that zinc or magnesium can be used interchangeably for the p-dopant in a given structure without any impact on device performance.

References

    1. 1)
    2. 2)
      • B. Ma , S. Cho , C. Lee , S. Lee , J. Kang , B. Kim , D. Kang , Y. Shin , Y. Kim , T. Kim , Y. Park . Realization of high-power highly efficient GaInP/AlGaInP ridge laser diodes for recordable/rewritable digital versatile discs. Jpn J. Appl. Phys. , 774 - 777
    3. 3)
      • M-F. Huang , M-L. Tsai , Y-K. Kuo . Improvement of characteristic temperature for AlGaInP laser diodes. Proc. SPIE , 127 - 134
    4. 4)
      • S. Bland . IQE.
    5. 5)
      • L.A. Coldren , S.W. Corzine . (1995) Diode lasers and photonic integrated circuits.
    6. 6)
    7. 7)
    8. 8)
    9. 9)
    10. 10)
      • P.M. Smowton , P. Blood , M.O. Manasreh . (1997) Visible emitting (AlGa)InP laser diodes, Optoelectronic properties of semiconductors superlattices. Strained-layer quantum wells and their applications.
    11. 11)
    12. 12)
http://iet.metastore.ingenta.com/content/journals/10.1049/ip-opt_20060050
Loading

Related content

content/journals/10.1049/ip-opt_20060050
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address