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Optimisation of high power AlGaInP laser diodes for optical storage applications

Optimisation of high power AlGaInP laser diodes for optical storage applications

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The use of expanded mode layers in lasers designed for DVD read/write applications is investigated and their performance is compared with that of a more conventional structure. The expanded mode design achieves a higher confinement factor and hence much lower threshold currents than the conventional structure, for the same measured vertical farfield divergence of 18°. T0 is increased from 51 to 65 K (20–70°C) for the expanded mode structure for 320-µm long devices with uncoated facets. It is also found that zinc or magnesium can be used interchangeably for the p-dopant in a given structure without any impact on device performance.

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