High-performance 1.3 µm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature

Author(s): C.Y. Jin ; H.Y. Liu ; T.J. Badcock ; K.M. Groom ; M. Gutiérrez ; R. Royce ; M. Hopkinson ; D.J. Mowbray
DOI: 10.1049/ip-opt:20060048

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Author(s): C.Y. Jin ¹ ; H.Y. Liu ¹ ; T.J. Badcock ² ; K.M. Groom ¹ ; M. Gutiérrez ³ ; R. Royce ² ; M. Hopkinson ¹ ; D.J. Mowbray ²
- Affiliations: 1: Department of Electronic & Electrical Engineering, EPSRC National Centre for III-V Technologies, University of Sheffield, Sheffield, UK
  2: Department of Physics & Astronomy, University of Sheffield, Sheffield, UK
  3: Dpto. de Ciencia de los Materiales e Ingenieria Metalurgica, y Quimica Inorganica, Facultad de Ciencias, Puerto Real, Spain
Source: Volume 153, Issue 6, December 2006, p. 280 – 283
DOI: 10.1049/ip-opt:20060048 , Print ISSN 1350-2433, Online ISSN 1359-7078

A high-growth-temperature GaAs spacer layer (HGTSL) is shown to significantly improve the performance of 1.3 µm multilayer InAs/GaAs quantum-dot (QD) lasers. The HGTSL inhibits threading dislocation formation, resulting in enhanced electrical and optical characteristics and hence improved performance of QD lasers. To further reduce the threshold current density and improve the room-temperature characteristic temperature (T₀), the high-reflection (HR) coating and p-type modulation doping have been incorporated with the HGTSL technique. A very low continuous-wave room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A cm⁻² are achieved for a three-layer device with a 1 mm HR/HR cavity, while a very low threshold current density of 48 A cm⁻² and a negative T₀ are achieved in the p-doped lasers.

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High-performance 1.3 µm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature

High-performance 1.3 µm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature

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