Measurement of modal absorption, gain and recombination in p-doped and intrinsic quantum dot structures

I.C. Sandall; C.L. Walker; P.M. Smowton; D.J. Mowbray; H.Y. Liu; M. Hopkinson

Measurement of modal absorption, gain and recombination in p-doped and intrinsic quantum dot structures

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Measurement of modal absorption, gain and recombination in p-doped and intrinsic quantum dot structures

Author(s): I.C. Sandall ; C.L. Walker ; P.M. Smowton ; D.J. Mowbray ; H.Y. Liu ; M. Hopkinson
DOI: 10.1049/ip-opt:20060042

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Author(s): I.C. Sandall ¹ ; C.L. Walker ¹ ; P.M. Smowton ¹ ; D.J. Mowbray ² ; H.Y. Liu ³ ; M. Hopkinson ³
- Affiliations: 1: School of Physics and Astronomy, Cardiff University, Cardiff, UK
  2: Department of Physics and Astronomy, Sheffield University, Sheffield, UK
  3: EPSRC National Centre for III-V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK
Source: Volume 153, Issue 6, December 2006, p. 316 – 320
DOI: 10.1049/ip-opt:20060042 , Print ISSN 1350-2433, Online ISSN 1359-7078

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The segmented contact method is used to study the performance of intrinsic and p-doped quantum dot structures emitting at 1.3 µm. From measurements of the absorption, it is shown that despite being doped to a level of 18 acceptor atoms per dot, only 19% of the quantum dot states are filled by excess holes, illustrating the importance of the continuum states in the wetting layer. We directly measure the modal gain and non-radiative recombination and show that the modal gain is increased as a function of transparency point when p-dopants are introduced without a significant increase in non-radiative recombination. These results explain the 65% reduction in threshold current observed for uncoated 1500 µm long devices at 300 K.

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Measurement of modal absorption, gain and recombination in p-doped and intrinsic quantum dot structures

Measurement of modal absorption, gain and recombination in p-doped and intrinsic quantum dot structures

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