http://iet.metastore.ingenta.com
1887

Measurement of modal absorption, gain and recombination in p-doped and intrinsic quantum dot structures

Measurement of modal absorption, gain and recombination in p-doped and intrinsic quantum dot structures

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
IEE Proceedings - Optoelectronics — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The segmented contact method is used to study the performance of intrinsic and p-doped quantum dot structures emitting at 1.3 µm. From measurements of the absorption, it is shown that despite being doped to a level of 18 acceptor atoms per dot, only 19% of the quantum dot states are filled by excess holes, illustrating the importance of the continuum states in the wetting layer. We directly measure the modal gain and non-radiative recombination and show that the modal gain is increased as a function of transparency point when p-dopants are introduced without a significant increase in non-radiative recombination. These results explain the 65% reduction in threshold current observed for uncoated 1500 µm long devices at 300 K.

References

    1. 1)
      • K. Otsubo , N. Hatori , M. Ishida , S. Okumura , T. Akiyama , Y. Nakata , H. Ebe , M. Sugawara , Y. Arakawa . Temperature-intesive eye-opening under 10-Gb/s modulation of 1.3-µm p-doped quantum-dot lasers without current adjustments. Jpn J. Appl. Phys. 2, Lett.
    2. 2)
    3. 3)
    4. 4)
    5. 5)
    6. 6)
    7. 7)
      • J. Siegert , S. Marcinkevicius , Q.X. Zhao . Carrier dynamics in modulation-doped InAs/GaAs quantum dots. Phys. Rev.
    8. 8)
    9. 9)
    10. 10)
    11. 11)
    12. 12)
    13. 13)
http://iet.metastore.ingenta.com/content/journals/10.1049/ip-opt_20060042
Loading

Related content

content/journals/10.1049/ip-opt_20060042
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address