© The Institution of Engineering and Technology
Fabrication of metal–semiconductor–metal near-infrared photodetectors with 0.4 µm-thick GaInNAs absorption layer was demonstrated. Better crystal quality and fewer dislocations were obtained from samples with lower nitrogen content based on the results of photoluminescence and high-resolution X-ray diffraction. The absorption edge located at 1.2 µm under 4 V bias was realised owing to the nitrogen incorporation effect, and the responsivity of GaInNAs MSM photodetectors higher than 60 mA/w was also successfully achieved when compared to other conventional InGaAs detectors. The devices, hereby demonstrated believably, should have potential applications in fibre optics communications.
References
-
-
1)
-
L.F. Laster ,
K.C. Hwang ,
P. Ho ,
J.M. Ballingall ,
J. Sutliff ,
S. Gupta ,
J. Whitaker ,
S.L. Williamson
.
Ultrafast long-wavelength photodetectors fabricated on low-temperature InGaAs on GaAs.
IEEE Photon. Technol. Lett.
-
2)
-
J.C. Carrano ,
T. Li ,
P.A. Grudowski ,
C.J. Eiting ,
R.D. Dupuis ,
J.C. Campbell
.
Current transport mechanisms in GaN-based metal-semiconductor-metal photodetectors.
Appl. Phys. Lett.
,
5 ,
542 -
544
-
3)
-
Steven R. Kurtz ,
A.A. Allerman ,
E.D. Jones ,
J.M. Gee ,
J.J. Banas ,
B.E. Hammons
.
InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs.
Appl. Phys. Lett.
,
729 -
731
-
4)
-
S.M. Spaziani ,
K. Vaccaro ,
J.P. Lorenzo
.
High performance substrate-removed InGaAs Schottky photodetectors.
IEEE Photonics Technol. Lett.
-
5)
-
D.J. Friedman ,
J.F. Geisz ,
S.R. Kurtz ,
J.M. Olson
.
1-eV solar cells with GaInNAs active layer.
J. Cryst. Growth
,
409 -
415
-
6)
-
T.K. Lin ,
S.J. Chang ,
Y.K. Su ,
Y.Z. Chiou ,
C.K. Wang ,
C.M. Chang ,
B.R. Huang
.
ZnSe homoepitaxy MSM photodetector with transparent ITO contact electrodes.
IEEE Trans. Electron. Devices
-
7)
-
R.A. Mair ,
J.Y. Lin ,
H.X. Jiang
.
Time-resolved photoluminescence studies of InxGa1−xAs1−yNy.
J. Appl. Phys.
-
8)
-
J.F. Geisz ,
D.J. Friedman ,
J.M. Olson ,
S.R. Kurtz ,
B.M. Keyes
.
Photocurrent of 1eV GaInNAs lattice-matched to GaAs.
J. Cryst. Growth
,
401 -
408
-
9)
-
C.H. Lee ,
A. Antonetti ,
G. Mourou
.
Measurement on the photoconductive lifetime of carriers in GaAs by optoelectronic gating technique.
Opt. Commun.
-
10)
-
D.H. Alston ,
P. Lavallard ,
N. Sol ,
D. Kaplan
.
An amorphous silicon photodetector for picosecond pulse.
Appl. Phys. Lett.
-
11)
-
M. Kondow ,
S.I. Nakatsuka ,
T. Kitatani ,
Y. Yazawa ,
M. Okai
.
Room-temperature pulsed operation of GaInNAs laser diodes with excellent high-temperature performance.
Jpn. J. Appl. Phys., Part 1
-
12)
-
R.H. Yuang ,
J.I. Chyi
.
Effects of finger width on large-area InGaAs MSM photodetectors.
Electron. Lett.
,
131 -
132
-
13)
-
W.K. Chan ,
G.-K. Chang ,
R. Bhat ,
N.E. Schlotter ,
C.K. Nguyen
.
High-speed Ga0.47In0.53As MISIM photodetectors with dielectric-assisted Schottky barriers.
IEEE Electron Device Lett.
-
14)
-
C. Johnson ,
J.Y. Lin ,
H.X. Jiang ,
M.A. Khan ,
C.J. Sun
.
Metastability and persistent photoconductivity in Mg-doped p-type GaN.
Appl. Phys. Lett.
-
15)
-
J.C. Carrano ,
P.A. Li Grudowski ,
C.J. Eiting ,
R.D. Dupuis ,
J.C. Campbell
.
Comprehensive characterization of metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN.
J. Appl. Phys.
,
6148 -
6160
-
16)
-
Ptak, A.J., Kurtz, S., Johnston, S.W., Friedman, D.J.: `Defects in GaInNAs: what we've learned so far', NCPV and Solar Program Review Meeting Proc., 2003, p. 202, NREL/CD-520-33586.
http://iet.metastore.ingenta.com/content/journals/10.1049/ip-opt_20050076
Related content
content/journals/10.1049/ip-opt_20050076
pub_keyword,iet_inspecKeyword,pub_concept
6
6