Optimisation of pulsed anodic oxidation for the fabrication of AlGaInP laser diodes grown with tertiarybutylarsine and tertiarybutylphosphine
Optimisation of pulsed anodic oxidation for the fabrication of AlGaInP laser diodes grown with tertiarybutylarsine and tertiarybutylphosphine
- Author(s): C.Y. Liu ; S.F. Yoon ; S.Z. Wang ; S. Yuan ; J.R. Dong ; J.H. Teng ; S.J. Chua
- DOI: 10.1049/ip-opt:20045037
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- Author(s): C.Y. Liu 1 ; S.F. Yoon 1 ; S.Z. Wang 1 ; S. Yuan 2 ; J.R. Dong 3 ; J.H. Teng 3 ; S.J. Chua 3
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View affiliations
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Affiliations:
1: School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
2: School of Materials Engineering, Nanyang Technological University, Singapore
3: Opto- and Electronic Systems Cluster, Institute of Materials Research and Engineering, Singapore
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Affiliations:
1: School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
- Source:
Volume 152, Issue 4,
August 2005,
p.
205 – 208
DOI: 10.1049/ip-opt:20045037 , Print ISSN 1350-2433, Online ISSN 1359-7078
GaInP/AlGaInP triple quantum well (TQW) laser structures were grown by low-pressure metalorganic chemical vapour deposition (MOCVD) with tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP). Device fabrication was carried out using the pulsed anodic oxidation (PAO) process, which was optimised for the (Al0.7Ga0.3)0.52In0.48P upper cladding layer of the laser structure using photoluminescence (PL) measurements and atomic force microscopy (AFM) characterisation. AlGaInP laser diodes, grown with TBAs and TBP, fabricated under the optimised oxidation conditions, exhibit the lowest reported threshold current density (Jth) of 1.5 kA/cm2 at room temperature (RT) under pulsed operation.
Inspec keywords: atomic force microscopy; quantum well lasers; photoluminescence; III-V semiconductors; indium compounds; current density; claddings; organic compounds; semiconductor growth; gallium compounds; oxidation; aluminium compounds; MOCVD
Other keywords:
Subjects: Design of specific laser systems; Semiconductor lasers; Chemical vapour deposition; Surface treatment and degradation in semiconductor technology; Surface treatment (semiconductor technology); Photoluminescence in II-VI and III-V semiconductors; Chemical vapour deposition; Lasing action in semiconductors
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