Epitaxy and characterisation of dilute III–As1−yNy on GaAs and InP

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Epitaxy and characterisation of dilute III–As1−yNy on GaAs and InP

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Epitaxial growth and characterisation of Ga1−xInxAs1−yNy films and quantum wells are presented. Starting with the epitaxy on GaAs, recent results on the local bonding of nitrogen in Ga1−xInxAs1−yNy are reviewed, revealing that bonding of nitrogen is controlled by an interplay between bond cohesive energy and reduction of local strain. Thus, III–N bonding can be changed from Ga–N to In–N by post-growth thermal annealing. For high In-content Ga1−xInxAs1−yNy on InP it is demonstrated that only small amounts of Ga are necessary to cause the bonding of the nitrogen atoms to at least one Ga neighbour. The epitaxy on InP substrates, equivalent to a drastic increase in indium content, allows an extension of optical transitions to longer wavelengths. The feasibility of high In-content Ga1−xInxAs1−yNy pseudomorphic quantum wells on InP is shown. The deterioration of the photoluminescence properties with increasing nitrogen incorporation can be partially compensated by thermal annealing. Within the resolution limits of the secondary ion mass spectrometry experiments, no annealing-induced loss of nitrogen was observed. The indium-rich strained Ga0.22In0.78As0.99N0.01 quantum wells are shown to exhibit room-temperature photoluminescence at wavelengths up to 2.3 μm. Finally quantum well lasers emitting at wavelengths beyond 2 μm are demonstrated.

Inspec keywords: semiconductor quantum wells; bonds (chemical); photoluminescence; semiconductor doping; semiconductor epitaxial layers; wide band gap semiconductors; quantum well lasers; indium compounds; secondary ion mass spectra; semiconductor growth; gadolinium compounds; annealing; nitrogen; III-V semiconductors

Other keywords: Ga1-xInxAs1-yNy films; photoluminescence; local strain reduction; nitrogen bonding; quantum well lasers; secondary ion mass spectrometry; pseudomorphic quantum wells; Ga1-xInxAs1-yNy; Ga1-xInxAs1-yNy quantum wells; epitaxial growth; bond cohesive energy; post-growth thermal annealing

Subjects: Doping and implantation of impurities; Thin film growth, structure, and epitaxy; II-VI and III-V semiconductors; Semiconductor doping; Semiconductor superlattices, quantum wells and related structures; Design of specific laser systems; Annealing processes in semiconductor technology; Low-dimensional structures: growth, structure and nonelectronic properties; Other heat and thermomechanical treatments; Semiconductor lasers; Photoluminescence in II-VI and III-V semiconductors; Lasing action in semiconductors; Optical properties of II-VI and III-V semiconductors (thin films, low-dimensional and nanoscale structures)

References

    1. 1)
      • Special Issue: . III–V–N semiconductor alloys. Semicond. Sci. Technol. , 8
    2. 2)
    3. 3)
    4. 4)
    5. 5)
    6. 6)
    7. 7)
    8. 8)
    9. 9)
    10. 10)
      • M. Maier , D. Serries , T. Geppert , K. Köhler , H. Güllich , N. Herres . SIMS depth profile of InGaAsN/InAlAs quantum wells on InP. Appl. Surf. Sci. , 486 - 489
    11. 11)
    12. 12)
      • D. Serries , T. Geppert , K. Köhler , P. Ganser , J. Wagner . Dilute group III–AsN: bonding of nitrogen in GaInAsN and AlGaAsN on GaAs and realisation of long wavelength (2.3 μm) GaInAsN QWs on InP. Mater. Res. Symp. Proc. , 627 - 636
    13. 13)
      • J.B. Héroux , X. Yang , W.I. Wang . GaInNAs resonant-cavity-enhanced operating at 1.3 μm. Appl. Phys. Lett. , 2716 - 2718
    14. 14)
    15. 15)
    16. 16)
    17. 17)
    18. 18)
      • W.A. Harrison . (1989) Electronic structure and the properties of solids.
    19. 19)
    20. 20)
      • W. Shan , W. Walukiewicz , K.M. Yu , J.W. Ager , E.E. Haller , J.F. Geisz , D.J. Friedman , J.M. Olson , S.R. Kurtz , C. Nauka . Effect of nitrogen on the electronic band structure of group III–N–V alloys. Phys. Rev. B, Condens. Matter , 4211 - 4214
    21. 21)
    22. 22)
      • G.-R. Chen , H.-H. Lin , J.-S. Wang , D.-K. Shih . Optical properties of InAs1−xNx/In0.53Ga0.47As single quantum wells grown by gas source molecular beam epitaxy. J. Electron. Mater. , 244 - 248
    23. 23)
    24. 24)
    25. 25)
    26. 26)
    27. 27)
    28. 28)
    29. 29)
      • J.-S. Wang , H.-H. Lin . Growth and post-growth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy. J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. , 1997 - 2000
    30. 30)
    31. 31)
    32. 32)
    33. 33)
    34. 34)
    35. 35)
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