Comparative optical study of GaAs_1−xN_x/GaAs and B_xGa_1−xAs/GaAs epilayers

Author(s): F. Saidi ; F. Hassen ; H. Maaref ; H. Dumont ; Y. Monteil
DOI: 10.1049/ip-opt:20040938

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Author(s): F. Saidi ¹ ; F. Hassen ¹ ; H. Maaref ¹ ; H. Dumont ² ; Y. Monteil ²
- Affiliations: 1: Faculté des Sciences de Monastir, Laboratoire de Physique des Semiconducteurs et des Composants Electroniques, Monastir, Tunisia
  2: Université Claude Bernard Lyon I, Laboratoire Multimateriaux et Interfaces, France
Source: Volume 151, Issue 5, October 2004, p. 342 – 345
DOI: 10.1049/ip-opt:20040938 , Print ISSN 1350-2433, Online ISSN 1359-7078

Optical studies of GaAs_1−xN_x/GaAs and B_xGa_1−xAs/GaAs epilayers grown by metal organic chemical vapour deposition (MOCVD), with various nitrogen (N) and boron (B) compositions, have been achieved by photoluminescence spectroscopy (PL) as a function of the excitation density and the sample temperature (10–300 K). The experiments have shown that the GaAsN PL band emission presents a more significant red shift than the BGaAs emission. For the GaAsN a reduction of 110 meV/1%N is shown, but for the BGaAs the PL band emission shifts to the low-energy side by up to 2.5%. A more significant blue shift of the PL bands with increasing the excitation density has been observed for GaAsN compared to BGaAs epilayer structures. The temperature dependence of the PL peak energy has shown S-shaped behaviour for both structures, but the localisation effects are more important in GaAsN than in BGaAs. Based on these experimental results, it is shown that B incorporation does not cause large modification of the band structure in B_xGa_1−xAs alloys compared to pure GaAsN structures.

References

1. 1)
  - G. Pozina , I. Ivanov , B. Monemar . Properties of molecular-beam epitaxy-grown GaAsN from optical spectrscopy. J. Appl. Phys.
2. 2)
  - H. Dumont , L. Auvray , Y. Monteil , C. Bondoux , L. Largeau , G. Patriarche . Microscopic structure and optical properties of GaAs1−xNx/GaAs(001) interface grown by metalorganic vapor phase epitaxy. Appl. Phys. Lett.
3. 3)
  - J.F. Geisz , D.J. Freidman , J.M. Olson , S.R. Kurtz , R.C. Reedy , A.B. Swartzlander , B.M. Keyes , A.G. Norman . BGaInAs alloys lattice matched to GaAs. Appl. Phys. Lett.
4. 4)
  - W. Shan , W. Walukiewicz , J. Wu , K.M. Yu , J.W. Ager , S.X. Li , E. Haller , J.F. Geisz , D.J. Friedman , Sarah R. Kurtz . Band gap bowing effects in BxGa1−xAs alloys. J. Appl. Phys.
5. 5)
  - Y. Zhang , A. Mascarenhas , H.P. Xin , C.W. Tu . Formation of an impurity band and its quantum confinement in heavily doped GaAs:N. Phys. Rev. B, Condens. Matter
6. 6)
  - S. Francoeur , G. Sivaraman , Y. Qlu , S. Nikishin , H. Temkin . Luminescence of as-grown and thermally annealed GaAsN/GaAs. Appl. Phys. Lett.
7. 7)
  - L. Bellaiche , S.H. Wei , A. Zunger . Band gaps of GaPN and GaAsN alloys. Appl. Phys. Lett.
8. 8)
  - L. Bellaiche , S. Wei , A. Zunger . Effects of atomic short range order on the electronic and optical properties of GaAsN, GaInN, and GaInAs alloys. Phys. Rev. B, Condens. Matter
9. 9)
  - F. Saidi , F. Hassen , H. Maaref , L. Auvray , H. Dumont , Y. Monteil . Exciton localization effects in GaAsN/GaAs epilayers grown by MOCVD. Mater. Sci. Eng. C, Biomin. Supramol. Syst.
10. 10)
  - A. Kaschner , T. Luttgert , H. Born , A. Hoffmann . Recombination mechanisms in GaInNAs/GaAs multiple quantum wells. Appl. Phys. Lett.
11. 11)
  - I.A. Buyanova , W.M. Chen , G. Pozina , J.P. Bergman , B. Monemar , H.P. Xin , C.W. Tu . Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy. Appl. Phys. Lett.
12. 12)
  - D. Perkins , A. Mascarenhas , Y. Zhang , J.F. Geisz , D.J. Friedman , J.M. Chen , S.R. Kurtz . Nitrogen-activated transitions, level repulsions, and band-gap reduction In GaAs1−xNx with x<0.03. Phys. Rev. Lett.
13. 13)
  - I.A. Buyanova , W.M. Chen , G. Pozina , J.P. Bergman , B. Monemar , H.P. Xin , C.W. Tu . Mechanism for low temperature photoluminescence in GaAsN/GaAs structures grown by molecular-beam epitaxy. Appl. Phys. Lett.
14. 14)
  - U. Tisch , E. Finkman , J. Salzman . The anomalous bandgap bowing in GaAsN. Appl. Phys. Lett. , 463 - 465
15. 15)
  - Gus L.W. Hart , Zunger Alex . Electronic structure of BAs and boride III–V alloys. Phys. Rev. B, Condens. Matter
16. 16)
  - M. Weyers , M. Sato , H. Ando . Red shift of photoluminescence and Absorption in dilute GsAsN alloy layers. Jpn. J. Appl. Phys.
17. 17)
  - V.K. Gupta , M.W. Koch , N.J. Wathing , Y. Gao , G.W. Wicks . Molecular beam epitaxial growth of BGaAs ternary compounds. J. Electron. Mater.
18. 18)
  - N.G. Szwacki , P. Boguslawski . GaAs:N vs GaAs:B alloys: Symmetry-induced effects. Phys. Rev. B, Condens. Matter Mater. Phys.
19. 19)
  - S. Francoeur , G. Sivaramam , Y. Qiu , S. Nikishin , H. Temkin . Luminescence of as-grown and thermally annealed GaAsN/GaAs. Appl. Phys. Lett. , 1857 - 1859
20. 20)
  - J.F. Geisz , D.J. Friedman , S. Kurtz , J.M. Olson , A.B. Swartzlander , R.C. Reedy , A.G. Norman . Epitaxial growth of BGaAs and BGaInAs by MOCVD. J. Cryst. Growth.

Comparative optical study of GaAs1−xNx/GaAs and BxGa1−xAs/GaAs epilayers

Comparative optical study of GaAs1−xNx/GaAs and BxGa1−xAs/GaAs epilayers

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Comparative optical study of GaAs_1−xN_x/GaAs and B_xGa_1−xAs/GaAs epilayers

Comparative optical study of GaAs_1−xN_x/GaAs and B_xGa_1−xAs/GaAs epilayers