The first colliding pulse mode-locked operation of devices fabricated from broad gain spectrum multiple-width quantum well material is reported. Using multiple-width quantum wells in the active region of the InGaAs/InAlGaAs material system, 35% broader gain bandwidth has been obtained in comparison to the conventional identical width quantum well material. For the colliding pulse mode-locked operation, observation made from the optical spectra showed that the multiple-width quantum well laser provided one extra optical mode with the pulse width narrowing by 7% in comparison to the identical width quantum well laser.
Inspec keywords: gallium arsenide; infrared spectra; indium compounds; laser mode locking; quantum well lasers; aluminium compounds
Other keywords:
Subjects: Infrared and Raman spectra in inorganic crystals; Lasing action in semiconductors; Laser beam modulation, pulsing and switching; mode locking and tuning; Laser beam modulation, pulsing and switching; mode locking and tuning; Design of specific laser systems; Semiconductor lasers
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