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The characteristics of optically induced teraherz (THz) radiation from a biased low-temperature-grown GaAs (LT-GaAs) photoconductive antenna were investigated using a femtosecond Ti:sapphire laser. The THz pulse radiation from two different LT-GaAs photoconductive antennas were compared and two kinds of THz waveform were observed. Saturation behaviour of the emission of THz radiation is observed by using a CW laser diode to optically pre-bias the emitter antenna.
Inspec keywords: photoconducting devices; submillimetre wave antennas; submillimetre wave detectors; submillimetre wave generation; semiconductor lasers; III-V semiconductors; gallium arsenide; low-temperature techniques; microwave photonics; high-speed optical techniques
Other keywords:
Subjects: Photoelectric devices; Ultrafast optical techniques; Solid-state microwave circuits and devices; Microwave photonics; Photodetectors; II-VI and III-V semiconductors; Single antennas; Detection of radiation (bolometers, photoelectric cells, i.r. and submillimetre waves detection); Microwave measurement techniques