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Mid-infrared ring laser diodes based on InAs grown by LPE are described. The source is based on a symmetrical double heterostructure with large band offsets that operates in a whispering gallery mode. For low drive currents, the device exhibited superluminescence and very strong spectral tuning. At higher current, coherent emission has been observed from 380 µm diameter devices, at 3.017 µm at a temperature of 80 K. The temperature dependence of the electroluminescence emission spectra and the light–current characteristics were also measured. The lasers have a maximum operating temperature of 125 K with a peak output power of 5 mW.
Inspec keywords: light emitting diodes; whispering gallery modes; spectral line narrowing; superradiance; semiconductor lasers; infrared sources; semiconductor heterojunctions; liquid phase epitaxial growth; ring lasers; electroluminescence; semiconductor growth; light coherence; laser modes
Other keywords:
Subjects: Design of specific laser systems; Semiconductor lasers; Laser resonators and cavities; Lasing action in semiconductors; Deposition from liquid phases; Laser resonators and cavities; Deposition from liquid phases (melts and solutions); Light emitting diodes