The band structure of InGaAsN/GaAs and InGaAsN/GaAsN strained quantum wells has been calculated using the band anticrossing model and an eight-band k·p Hamiltonian. The calculated interband optical transition energies have been compared to the experimental ones deduced from photocurrent spectroscopy experiments. Optical dipole moments for the interband optical transitions and the dependence of the optical gain spectra on injected carrier density have been computed.
Inspec keywords: III-V semiconductors; gallium arsenide; band structure; k.p calculations; semiconductor quantum wells; carrier density; gallium compounds; photoconductivity; indium compounds; semiconductor device models
Other keywords:
Subjects: Photoconduction and photovoltaic effects; photodielectric effects; Semiconductor superlattices, quantum wells and related structures; Photoconducting materials and properties; Other methods of electronic structure calculations (condensed matter); Electronic structure of crystalline semiconductor compounds and insulators; Surface states, surface band structure, surface electron density of states; Semiconductor device modelling, equivalent circuits, design and testing; Optical properties of II-VI and III-V semiconductors (thin films, low-dimensional and nanoscale structures)
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