http://iet.metastore.ingenta.com
1887

Effect of post-growth laser treatment on optical properties of Ga(In)NAs quantum wells

Effect of post-growth laser treatment on optical properties of Ga(In)NAs quantum wells

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
IEE Proceedings - Optoelectronics — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The effects of laser irradiation on the optical properties of GaAsN and GaInNAs quantum wells are studied in detail. Laser treatment is found to affect GaAsN quantum wells similarly to thermal annealing. The most intense photoluminescence is obtained by utilising both thermal and laser treatments. In quaternary GaInNAs, the effects of thermal annealing and laser treatment differ from each other. Thermal annealing of a Ga0.80In0.20N0.02As0.98 quantum well at 700°C for 10 min shifts the photoluminescence peak by 86 meV towards large photon energies and increases its integrated intensity by a factor of ten. For the same quantum well structure, the luminescence intensity increases by a factor of 2.5 due to laser treatment, whereas the blue shift of the luminescence peak is negligible. The laser treatment effects are observed at laser irradiation intensities encountered in typical photoluminescence measurement conditions. Therefore, the effects of laser irradiation should be taken into account when measuring the optical properties of Ga(In)NAs samples.

References

    1. 1)
    2. 2)
    3. 3)
    4. 4)
    5. 5)
    6. 6)
      • A. Buyanova , G. Pozina , P.N. Hai , W.M. Chen , H.P. Xin , C.W. Tu . Type I band alignment in the GaNxAs1−x/GaAs quantum wells. Phys. Rev. B , 3 , 33303 - 333(1
    7. 7)
    8. 8)
    9. 9)
    10. 10)
    11. 11)
    12. 12)
    13. 13)
    14. 14)
    15. 15)
      • P.J. Klar , H. Grüning , J. Koch , S. Schäfer , K. Volz , W. Stolz , W. Heimbrodt , A.M. Kamal Saadi , A. Lindsay , E.P. O'Reilly . (Ga,In)(N,As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen. Phys. Rev. B , 12 , 121203 - 1212(1
    16. 16)
    17. 17)
    18. 18)
http://iet.metastore.ingenta.com/content/journals/10.1049/ip-opt_20030052
Loading

Related content

content/journals/10.1049/ip-opt_20030052
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address