Structural, electrical and recombination properties of Be-doped low-temperature MBE grown (LTG) GaAs have been investigated by using a number of different experimental techniques. These properties were analysed with respect to the applications of LTG GaAs in ultrafast optoelectronic devices. It has been found that a moderate Be-doping improves the structural quality of the layers and does not affect their semi-insulating behaviour. Electron and hole capture cross-sections, critical parameters for the design of optoelectronic devices from LTG GaAs, equal to σn=1.1×10−13 and σp=1.8×10−15 cm2 were also determined.
Inspec keywords: optoelectronic devices; carrier mobility; gallium arsenide; semiconductor doping; transmission electron microscopy; molecular beam epitaxial growth; beryllium; optical switches
Other keywords:
Subjects: Semiconductor doping; Vacuum deposition; Vacuum deposition; Doping and implantation of impurities; Electron microscopy determinations of structures; Low-field transport and mobility; piezoresistance (semiconductors/insulators); Optical bistability, multistability and switching; Optical bistability, multistability and switching
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