Be-doped low-temperature-grown GaAs material for optoelectronic switches
Be-doped low-temperature-grown GaAs material for optoelectronic switches
- Author(s): A. Krotkus ; K. Bertulis ; M. Kaminska ; K. Korona ; A. Wolos ; J. Siegert ; S. Marcinkevičius ; J.-F. Roux ; J.-L. Coutaz
- DOI: 10.1049/ip-opt:20020435
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- Author(s): A. Krotkus 1 ; K. Bertulis 1 ; M. Kaminska 2 ; K. Korona 2 ; A. Wolos 2 ; J. Siegert 3 ; S. Marcinkevičius 3 ; J.-F. Roux 4 ; J.-L. Coutaz 4
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View affiliations
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Affiliations:
1: Semiconductor Physics Institute, Lithuania
2: IEP, University of Warsaw, Warsaw, Poland
3: Department of Microelectronics and Information Technology, Royal Institute of Technology, Kista, Sweden
4: LAHC, University of Savoie, Le Bourget du Lac Cedex, France
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Affiliations:
1: Semiconductor Physics Institute, Lithuania
- Source:
Volume 149, Issue 3,
June 2002,
p.
111 – 115
DOI: 10.1049/ip-opt:20020435 , Print ISSN 1350-2433, Online ISSN 1359-7078
Structural, electrical and recombination properties of Be-doped low-temperature MBE grown (LTG) GaAs have been investigated by using a number of different experimental techniques. These properties were analysed with respect to the applications of LTG GaAs in ultrafast optoelectronic devices. It has been found that a moderate Be-doping improves the structural quality of the layers and does not affect their semi-insulating behaviour. Electron and hole capture cross-sections, critical parameters for the design of optoelectronic devices from LTG GaAs, equal to σn=1.1×10−13 and σp=1.8×10−15 cm2 were also determined.
Inspec keywords: optoelectronic devices; carrier mobility; gallium arsenide; semiconductor doping; transmission electron microscopy; molecular beam epitaxial growth; beryllium; optical switches
Other keywords:
Subjects: Semiconductor doping; Vacuum deposition; Vacuum deposition; Doping and implantation of impurities; Electron microscopy determinations of structures; Low-field transport and mobility; piezoresistance (semiconductors/insulators); Optical bistability, multistability and switching; Optical bistability, multistability and switching
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