The illumination effect on switching performance is presented for a triangular-barrier resonant-tunnelling diode (TBRDT). A δ-doped quantum well is inserted into the centre of the TBRTD. Owing to the resonant tunnelling through the miniband in the quantum well, an N-shaped negative-differential-resistance phenomenon is observed in the current–voltage characteristics. The device shows a flexible optical function related to the cap-layer conductivity and a potential barrier height which can be changed by incident light.
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