http://iet.metastore.ingenta.com
1887

Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs

Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
IEE Proceedings - Optoelectronics — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The use of a rare earth gettering technique for the growth of very pure InAs(Sb) epitaxial layers of high quantum efficiency and its application for the fabrication of powerful 4.6 μm LEDs operating at room temperature is reported. By introducing the rare earth element Gd or Yb into the liquid phase during LPE growth, it is found that the carrier concentration of InAs(Sb) layers can be effectively reduced to ∼6×1015 cm−3, and that the photoluminescence (PL) intensity of such layers can be considerably increased by between 10 and 100 times compared with untreated material. This behaviour is attributed to the gettering of residual impurities and the corresponding reduction of non-radiative recombination centres in the presence of the rare earth. This technique is used to purify the InAs0.89Sb0.11 ternary material in the active region of an InAs0.55Sb0.15P0.30/InAs0.89Sb0.11/InAs0.55Sb0.15P0.30 symmetrical double heterostructure LED. A pulsed optical output power in excess of 1 mW at room temperature is measured, making these emitters suitable for use in portable instruments for the environmental monitoring of carbon monoxide at 4.6 μm.

References

    1. 1)
      • M.K. PARRY , A. KRIER . Efficient 3.3 μm light emitting diodes for detection methane gas at room temperature. Electron. Lett. , 1968 - 1969
    2. 2)
      • A.A. Popov , V.V. Sherstnev , Yu.P. Yakovlev , A.N. Baranov , C. Alibert . Powerful mid-infrared light emitting diodes for pollution monitoring. Electron. Lett. , 86 - 88
    3. 3)
      • A. KRIER , Y. MAO . 2.5 μm light emitting diodes in InAs0.36Sb0.20P0.44/InAs for HF detection. IEE Proc Optoelectron , 355 - 359
    4. 4)
      • A.A. POPOV , M.V. STEPANOV , V.V. SHERSTNEV , Y.P. YAKOVLEV . InAsSb light emitting diodes for the detection of CO2(λ=4.3 μm). Techn. Phys. Lett. , 8 , 596 - 598
    5. 5)
      • O. Madelung . (1964) , Physics of III-V compounds.
    6. 6)
      • A. VERDIN . (1975) , Gas Analysis Instrumentation.
    7. 7)
      • I.A. ANDREEV , M.A. AFRAILOV , A.N. BARANOV , M.P. MIKHAILOVA , K.D. MOISEEV , I.N. TIMCHENKO , V.E. SHESTNEV , V.E. UMANSKII , Y.P. YAKOVLEV . Uncooled photodiodes based on InAs/InAsSbP for the spectral range of 2–3.5 μm. Sov. Techn. Phys. Lett. , 27 - 32
    8. 8)
      • N.P. ESINA , N.V. ZOTOVA , B.A. MATVEEV , L.D. NEUIMINA , N.M. STUS , G.N. TALALAKIN . Characteristics of the luminescence of plastically deformed InAsSbP-InAs heterostructures. Soviet Physics - Semiconductors-USSR , 1250 - 1252
    9. 9)
      • A. POPOV , V. SHERSTNEV , Y. YAKOVLEV , S. TSIVISH , Z. ZELINGER . Observation of a negative characteristic temperature for the threshold current of diode lasers for the 2.8um spectral range. Tech. Phys. Lett. , 11
    10. 10)
      • A. POPOV , V. SHERSTNEV , Y. YAKOVLEV , R. MUCKE , P. WERLE . Single frequency InAsSb lasers emitting at 3.4um. Spectrochimica Acta, A. , 863 - 870
    11. 11)
      • A. KRIER , H.H. GAO , Y. MAO . A room temperature photovoltaic detector for the mid-infrared (1.8–3.4 μm) wavelength region. Semicond. Sci & Technol. , 950 - 956
    12. 12)
      • A. POPOV , V. SHERSTNEV , Y.U. YAKOVLEV , A.N. BARANOV , C. ALIBERT . Powerful midinfrared light emitting diodes for pollution monitoring. Electron. Lett , 86 - 88
    13. 13)
      • A. KUMAR , D. PAL , D.N. BOSE . Liquid-phase epitaxy growth of InGaAs with rare-earth gettering – characterization and deep-level transient spectroscopy studies. J. Elect. Mater. , 833 - 840
    14. 14)
      • M.C. WU , E.H. CHEN , T.S. CHIN , Y.K. TU . Erbium doping in InGaAsP grown by liquid-phase epitaxy. J. Appl. Phys. , 456 - 461
    15. 15)
      • W. GAO , P.R. BERGER . Liquid phase epitaxial growth of InGaAs on InP using rare-earth-treated melts. J. Appl. Phys. , 7094 - 7103
    16. 16)
      • N.T. BAGRAEV , L.S. VLASENKO , K.A. GATSOEV , A.T. GORELENOK , A.V. KAMANIN , V.V. MAMUTIN , B.V. PUSHNYI , V.K. TIBILOV , Y.P. TOLPAROV , A.E. SHUBIN . Influence of rare-earth elements on the carrier mobility in epitaxial InP and InGaAs films. Soviet Physics Semiconductors-USSR , 1 , 49 - 50
    17. 17)
      • H.H. GAO , A. KRIER , SHERTSNEV . InAsSb/InAsSbP light emitting diodes for the detection of CO and CO2 at room temperature. J Phys. D , 1768 - 1772
    18. 18)
      • ZOTOVA, N.V., KARANDASHOV, S.A., LAGUNOVA, T.S., MATVEEV, B.A., STUS'N, M., TALALAKIN, G.N.: `Rare earth gettering of InAs', poster presented at 1st International Conference on Mid-infrared optoelectronics materials and Devices, 1996, Lancaster.
    19. 19)
      • T.H. CHIU , J.A. DITZENBERGER . Chemical beam epitaxial growth of InAs using trimethylindium and arsine. Appl. Phys. Lett. , 2219 - 2221
    20. 20)
      • R.D. GROBER , H.D. DREW , J.I. CHYI , S. KALEM , H. MORKOC . Infrared Photoluminescence Of InAs Epilayers Grown on GaAs And Si Substrates. J. Appl. Phys. , 10 , 4079 - 4081
    21. 21)
      • P.J.P. TANG , C.C. PHILLIPS , R.A. STRADLING . Excitonic photoluminescence in high-purity InAs MBE epilayers on GaAs substrates. Semicond. Sci. & Technol. , 2135 - 2142
    22. 22)
      • R.D. GROBER , H.D. DREW . Evidence for an electron-hole plasma in the photoluminescence spectra of insulating InSb at very low pump intensities. Phys. Rev. , 11732 - 11739
    23. 23)
      • Z.M. FANG , K.Y. M.A. , D.H. JAW , R.M. COHEN , G.B. STRINGFELLOW . Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor-phase epitaxy. J. Appl. Phys. , 7034 - 7039
    24. 24)
      • M. FISHER , A. KRIER . Photoluminescence of epitaxial InAs produced by different growth methods. Infrared Physics & Technology , 405 - 413
http://iet.metastore.ingenta.com/content/journals/10.1049/ip-opt_20000503
Loading

Related content

content/journals/10.1049/ip-opt_20000503
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address