Temperature characteristics of near-infrared (1.7 micron), resonant cavity light-emitting diodes

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Temperature characteristics of near-infrared (1.7 micron), resonant cavity light-emitting diodes

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The design and operation of a near infra-red resonant cavity light-emitting diode operating at 1.7 microns with a 16 nm linewidth is described. The structure is based on a wafer-bonded combination of InGaAs/InAlAs/InP quantum well emitter and an AlAs/GaAs distributed Bragg reflector. Detailed temperature characteristics over a range from 80 to 373 K are presented. The temperature dependence of the main cavity mode emission wavelength is shown to be 0.15 nm/K. The intensity is found to increase with temperature from 80 to 325 K and thereafter decrease. There is a 20 degree range in which the intensity is constant within approximately 5%. A model is suggested for this behaviour.

Inspec keywords: III-V semiconductors; light emitting diodes; gallium arsenide; infrared sources; optical design techniques; optical resonators; indium compounds; semiconductor quantum wells; aluminium compounds

Other keywords: 80 to 325 K; main cavity mode emission wavelength; temperature characteristics; InGaAs-InAlAs-InP quantum well emitter; 1.7 mum; wafer-bonded combination; AlAs-GaAs distributed Bragg reflecto; temperature dependence; AlAs-GaAs; LED; 80 to 373 K; InGaAs-InAlAs-InP; linewidth; near-IR resonant cavity light-emitting diodes

Subjects: Semiconductor superlattices, quantum wells and related structures; Display materials; Light emitting diodes

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