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Comparison between planar InP/InGaAs/InP pin photodiodes with symmetrical and asymmetrical doping profiles

Comparison between planar InP/InGaAs/InP pin photodiodes with symmetrical and asymmetrical doping profiles

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High-speed p-end-illuminated planar InP/InGaAs/InP heterojunction p-i-n photodiodes have been fabricated with symmetrical and asymmetrical doping profiles. Static and dynamic characteristics of both devices were measured for comparison. The device with symmetrical doping profile exhibits inferior characteristics at low reverse bias (<4 V). Nevertheless, if sufficiently reverse biased (≥4 V), a symmetrically doped device can have DC responsivity comparable to, and maximum 3 dB bandwidth higher than, a conventional asymmetrically doped device. The inferior characteristics at low reverse bias and promoted maximum bandwidth of a symmetrically doped device can be, respectively, attributed to the heterointerface exposed in the depletion region and reduced device capacitance caused by an extra-depleted InP region.

Inspec keywords: gallium arsenide; doping profiles; indium compounds; semiconductor doping; symmetry; high-speed optical techniques; integrated optics; p-i-n photodiodes; III-V semiconductors

Other keywords: 4 V; DC responsivity; symmetrical doping profile; low reverse bias; asymmetrical doping profiles; InP-InGaAs-InP; planar InP/InGaAs/InP pin photodiodes; maximum bandwidth; symmetrically doped device; dynamic characteristics; high-speed p-end-illuminated planar InP/InGaAs/InP heterojunction p-i-n photodiodes; symmetrical doping profiles; extra-depleted InP region

Subjects: II-VI and III-V semiconductors; Photoelectric devices; Integrated optics; Semiconductor doping

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