Optimisation of InGaAs infrared photovoltaic detectors

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Optimisation of InGaAs infrared photovoltaic detectors

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The ultimate signal-to-noise performance of infrared photodetectors is limited by the statistical nature of the thermal generation and recombination of charge carriers. Band-to-band Auger processes dominate in a high quality InGaAs used for photovoltaic detector operating at room temperature. The performance of devices operating in the 2–3.4μm spectral range has been analyzed theoretically. Homo- and heterostructure devices have been considered. The use of n+np+ (or n+pp+) with heavily doped regions has been found to prevent the recombination of photogenerated carriers at contacts, but the bulk thermal generation in the heavily doped regions will significantly reduce the performance of the devices.

Inspec keywords: gallium arsenide; photovoltaic effects; III-V semiconductors; Auger effect; infrared detectors; indium compounds; semiconductor doping; statistical analysis

Other keywords: InGaAs infrared photovoltaic detector optimisation; photovoltaic detector; thermal generation; 2 to 3.4 mum; high quality InGaAs; InGaAs; charge carrier recombination; heterostructure devices; statistical nature; bulk thermal generation; room temperature; ultimate signal-to-noise performance; infrared photodetectors; photogenerated carriers; homostructure devices; band-to-band Auger processes; heavily doped regions

Subjects: Electron-surface impact: Auger emission; Semiconductor doping; Probability and statistics; Doping and implantation of impurities; Photoconducting materials and properties; Thermal instruments and techniques; Photodetectors; Probability theory, stochastic processes, and statistics; Photoconduction and photovoltaic effects; photodielectric effects; Detection of radiation (bolometers, photoelectric cells, i.r. and submillimetre waves detection)

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