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Light sources for wavelengths > 2 µm grown by MBE on InP using a strain relaxed buffer

Light sources for wavelengths > 2 µm grown by MBE on InP using a strain relaxed buffer

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Light emitting diodes (LEDs) and lasers operating in the 2 to 3 µm spectral region at room temperature are been demonstrated. The devices were fabricated from InxGa1-xAs/InAsyP1-y double heterostructures grown on n-type InP (100) substrates by molecular beam epitaxy. A strain relaxed buffer layer which incorporates composition reversals was used to reduce the threading dislocation density and to accommodate the large lattice mismatch (up to 2.7%) between the InP substrate and the device active region. Efficient electroluminescence emission at wavelengths between 2 and 3 µm was obtained from the LEDs at room temperature, while diode lasers exhibited coherent emission in the range 2–2.6 µm at temperatures up to 130 K. For one of the LEDs a characteristic absorption was readily observed at 2.7 µm in the diode electroluminescence emission spectrum, corresponding to strong water vapour absorption in the atmosphere. These devices could easily form the key component of an infrared gas sensor for water vapour detection and monitoring at 2.7 µm in a variety of different applications.

References

    1. 1)
      • G.H. Olsen , T.J. Zamerowski . (1979) Progress in crystal growth characteristics.
    2. 2)
      • Peter, M.: ISCS, September 1997, San Diego.
    3. 3)
      • A. Sarcedón , F. González-Sanz , E. Calleja , E. Muñoz , S.I. Molina , F.J. Pacheco , D. Araújo , R. García , M. Lourenço , Z. Yang , P. Kidd , D. Dunstan . Design of InGaAs linear graded buffer structures. Appl. Phys. Lett. , 24
    4. 4)
      • S. Farouhar . Electron. Lett.. Electron. Lett.
    5. 5)
      • D.J. Dunstan , S. Young , R.H. Dixon . Geometrical theory of critical thickness and relaxation in strained-layergrowth. J. Appl. Phys.
    6. 6)
      • M.K. Parry , A. Krier . Efficient 3.3 µm light emitting diodes for the detection of methanegas. Electron. Lett. , 1968 - 1969
    7. 7)
      • A.N. Baranov , V.V. Sherstnev , C. Alibert , A. Krier . New III-V semiconductorlasers emitting near 2.6 µm. J. Appl. Phys. , 3354 - 3356
    8. 8)
      • Y. Mao , A. Krier . Uncooled 4.2 µm light emitting diodes based on InAs0.91Sb0.09/GaSbgrown by LPE. Opt. Mater. , 55 - 61
    9. 9)
      • D. Garbuzov , D.S. Kim , S.R. Forrest , R. Menna , M. Lange , G.H. Olsen , M. Cohen . Efficient 2.0–2.6 µm wavelength photoluminescence from narrowbandgap InAsP/InGaAs doubleheterostructures grown on InP substrates. J. Electron. Mater. , 9
    10. 10)
      • A. Krier , Y. Mao . 2.5 µm light emitting diodes in InAs0.36Sb0.20P0.44/InAsfor HF detection. IEE Proc. Optoelectron. , 355 - 359
    11. 11)
      • J. Tersoff . Dislocation and strain relief in compositionally graded layers. Appl. Phys. Lett. , 7
    12. 12)
      • R.U. Martinelli . Temperature dependence of 2 µm strained-quantum-well InGaAs/InGaAsP/InPdiode lasers. Electron. Lett. , 324 - 326
    13. 13)
      • M. D'Hondt , I. Moerman , P. Demeester . Characterisation of 2% mismatched InGaAs and InAsP layers, grown on differentbuffer layersand at different growth temperatures. J. Crystal Growth , 616 - 620
    14. 14)
      • C. Gorecki . Range finding using frequency-modulated interferometry with a monomodeexternal-cavity laser diode. Jpn. J. Appl. Phys., 1 , 5 , 2833 - 2838
    15. 15)
      • K. Chrzanowski . Comparison of shortwave and longwave measuring thermal-imaging systems. Appl. Opt. , 16 , 2888 - 2897
    16. 16)
      • R. Beanland , D.J. Dunstan , P.J. Goodhew . Plastic relaxation and relaxed buffer layers for semiconductor epitaxy. Adv. Phys.
    17. 17)
      • M.K. Parry , A. Krier . Room-temperature Cd-diffused InAsSbP diodes for methane gas detection. Semicond. Sci. Technol. , 9 , 1764 - 1769
    18. 18)
      • R.U. Martinelli , R.J. Menna , D.E. Cooper , C.B. Carisle , H. Riris . Near-infrared InGaAs/InP distributed-feedback lasers for spectroscopicapplications. Proc. SPIE Int. Soc. Opt. Eng.
    19. 19)
      • E.P. O'Reilly , A.R. Adams . Band-structure engineering in strained semiconductor lasers. IEEE J. Quantum Electron. , 366 - 379
    20. 20)
      • Hopkinson, M.: Mid–IR Optoelectronics conference, September 1996, Lancaster.
    21. 21)
      • R.U. Martinelli , T.J. Zamerowski , P.A. Longeway . InGaAs/InAsP lasers with output wavelengths of 1.58–2.45 µm. Appl. Phys. Lett. , 3
    22. 22)
      • R.U. Martinelli , G.H. Olsen . Improved transmission secondary emission from InxGa1-xP/GaAsself-supporting filmsactivated to negative electron affinity. J. Appl. Phys. , 4
    23. 23)
      • A. Krier , D.R. Rowe . Photoluminescence of LPE-grown InAs1-x-ySbxPyfor 2.55 µm lasers. Materials Lett. , 225 - 231
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