Investigation of wafer-bonded (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes

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Investigation of wafer-bonded (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes

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This paper investigates the differences of wafer-bonded n-(Al0.7Ga0.3)0.5In0.5P/n-GaP, n-Ga0.5In0.5P/n-GaP and n-GaP/n-GaP heterointerfaces. The current–voltage characteristics have been demonstrated to be a result of different wafer cleaning methods. Bonded interfaces were also characterised by scanning electron microscopy and transmission electron microscopy. In addition, an (AlxGa1-x)0.5In0.5P light-emitting diode (LED) was fabricated by wafer direct bonding technique. The luminous intensity of the wafer-bonded (AlxGa1-x)0.5In0.5P/GaP LED is about two times brighter than the conventional device with an absorbing GaAs substrate.

Inspec keywords: indium compounds; scanning electron microscopy; wafer bonding; optical fabrication; brightness; light emitting diodes; III-V semiconductors; transmission electron microscopy; gallium compounds; aluminium compounds

Other keywords: n-(Al0.7Ga0.3)0.5In0.5P/n-GaP heterointerfaces; LED; current-voltage characteristics; luminous intensity; brighter; absorbing GaAs substrate; AlGaInP-GaP; bonded interfaces; wafer cleaning methods; scanning electron microscopy; wafer-bonded (AlxGa1-x)0.5In0.5P/Gap LED; transmission electron microscopy; n-Ga0.5In0.5P/n-GaP heterointerfaces; wafer-bonded (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes; n-GaP/n-GaP heterointerfaces

Subjects: Display technology; Light emitting diodes; Semiconductor technology

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