In(As, Sb) superlattice-based emitters for mid-IR wavelengths

Author(s): C.C. Phillips
DOI: 10.1049/ip-opt:19971380

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Author(s): C.C. Phillips ¹
- Affiliations: 1: Physics Department, Soild State Group, Imperial College, London, United Kingdom
Source: Volume 144, Issue 5, October 1997, p. 262 – 265
DOI: 10.1049/ip-opt:19971380 , Print ISSN 1350-2433, Online ISSN 1359-7078

Optical, magneto-optical and time-resolved spectroscopies indicate that arsenic-rich InAs/InAs_1-_x Sb_x strained-layer superlattices have a pronounced type-II offset, with electrons confined to the alloy layers, encouragingly high radiative efficiencies at wavelengths well into the midinfrared, and exhibit suppression of Auger recombination. LEDs operating at 3–10 µm now give room temperature powers of 30 µW and are probably at present limited by inadequate electron confinement.

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In(As, Sb) superlattice-based emitters for mid-IR wavelengths

In(As, Sb) superlattice-based emitters for mid-IR wavelengths

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