Carrier diffusion inside active regions of gain-guided vertical-cavity surface-emitting lasers

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Carrier diffusion inside active regions of gain-guided vertical-cavity surface-emitting lasers

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The radial carrier diffusion process inside active regions of gain-guided vertical-cavity surface-emitting lasers (VCSELs) is studied rigorously. To this end, a comprehensive three-dimensional self-consistent VCSEL simulation is used. In the modelling, carrier degeneracy as well as temperature and carrier-concentration dependencies of the diffusion coefficient are taken into account. For the room-temperature operation of the GaAs/AlGaAs/AlAs proton-implanted top-surface-emitting VCSELs, ambipolar diffusion coefficient was found to be relatively low (≃ 7.5 cm2/sec) and nearly constant inside the active region but it increases rapidly beyond this region. It is, however, proved that although very accurate VCSEL modelling requires rigorous treatment of the carrier diffusion process, an average constant value of the diffusion coefficient may be undoubtedly used in quite reliable VCSEL simulations.

Inspec keywords: ion implantation; semiconductor lasers; laser theory; gallium arsenide; III-V semiconductors; laser cavity resonators; semiconductor device models; surface emitting lasers; aluminium compounds; diffusion

Other keywords: reliable VCSEL simulations; comprehensive three-dimensional self-consistent VCSEL simulation; GaAs-AlGaAs-AlAs proton-implanted top-surface-emitting VCSELs; carrier diffusion; carrier-concentration dependencies; radial carrier diffusion process; active region; carrier degeneracy; ambipolar diffusion coefficient; active regions; room-temperature operation; VCSEL modelling; GaAs-AlGaAs-AlAs; gain-guided vertical-cavity surface-emitting lasers

Subjects: Laser resonators and cavities; Semiconductor doping; Semiconductor lasers; Diffusion and ionic conduction in solids; Semiconductor device modelling, equivalent circuits, design and testing; Lasing action in semiconductors; Doping and implantation of impurities; Laser resonators and cavities

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