A standard SIMOX substrate with 0.2 µm silicon film can be used for integrated optics. A lateral P+–I–N+ structure in the silicon film is proposed to obtain electro-optical phase modulation by carrier injection. Field confinement is ensured by a rib-loaded geometry. Simulations have been performed to estimate waveguide losses for such 2D-guiding structures suitable for phase modulation. Quasi-singlemode propagation with low losses in the doped regions and low additional loss under injection conditions is predicted.
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