Quasi-TE00 singlemode optical waveguides for electro-optical modulation at 1.3 µm using standard SIMOX material

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Quasi-TE00 singlemode optical waveguides for electro-optical modulation at 1.3 µm using standard SIMOX material

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A standard SIMOX substrate with 0.2 µm silicon film can be used for integrated optics. A lateral P+–I–N+ structure in the silicon film is proposed to obtain electro-optical phase modulation by carrier injection. Field confinement is ensured by a rib-loaded geometry. Simulations have been performed to estimate waveguide losses for such 2D-guiding structures suitable for phase modulation. Quasi-singlemode propagation with low losses in the doped regions and low additional loss under injection conditions is predicted.

Inspec keywords: SIMOX; optical losses; optical planar waveguides; optical waveguides; integrated optics; electro-optical modulation; silicon; phase modulation

Other keywords: integrated optics; quasi-single-mode propagation; silicon film; quasi-TE00 single-mode optical waveguides; standard SIMOX substrate; doped regions; Si; standard SIMOX material; 2D-guiding structures; 0.2 mum; electro-optical modulation; phase modulation; carrier injection; low additional loss; electro-optical phase modulation; rib-loaded geometry; 1.3 mum; lateral P+-I-N+ structure; injection conditions; waveguide losses

Subjects: Metal-insulator-semiconductor structures; Semiconductor doping; Electrical properties of metal-insulator-semiconductor structures; Optical beam modulators; Integrated optics; Optical waveguides; Modulation and coding methods; Electro-optical devices; Optical waveguides and couplers

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