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Nearly perfect output power saturation of the semiconductor Raman laser

Nearly perfect output power saturation of the semiconductor Raman laser

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Low-threshold semiconductor Raman lasers with a tapered waveguide structure with GaP core and AlxGa1-xP cladding layers have been operated in a quasi CW operation condition. It has been found that the first Stokes light output power nearly perfectly saturates when the pump power is increased, and this has been attributed to lasing of the second Stokes light. This effect will be useful for realising a low-noise light wave source.

Inspec keywords: optical saturation; optical pumping; gallium compounds; III-V semiconductors; semiconductor device noise; semiconductor lasers; waveguide lasers; laser noise; Raman lasers

Other keywords: GaP core; second Stokes light; pump power; nearly perfect output power saturation; AlGaP; quasi CW operation condition; AlxGa1-xP cladding layers; first Stokes light output power; semiconductor Raman laser; GaP; low-noise light wave source; low-threshold semiconductor Raman lasers; tapered waveguide structure

Subjects: Optical transient phenomena, self-induced transparency, optical saturation and related effects; Semiconductor lasers; Lasing action in semiconductors; Design of specific laser systems; Stimulated Raman scattering and spectra; CARS; stimulated Brillouin and stimulated Rayleigh scattering and spectra; Nonlinear optics and devices

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