Optically controlled characteristics of an ion-implanted hetero-MIS capacitor

Optically controlled characteristics of an ion-implanted hetero-MIS capacitor

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The paper introduces an InGaAs/InP:Fe hetero-MIS structure which can be used as an optically controlled capacitor. A numerical model of the device has been developed to investigate the effect of illumination on the characteristics of the device. To generalise the model, the semiconductor has been assumed to be nonuniformly doped. The model takes into account the effects of the surface states and change in time constant of the minority carriers (electrons in this case) due to illumination. It has been found that the capacitance of the proposed structure can be precisely controlled by the incident optical power. The capacitor is expected to find useful applications in solid-state imaging and optical tuning. The model developed here can be used as a basic tool for analysing similar hetero-MIS structures with arbitrary doping profiles.

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