Analysis and design of class-B dual fed distributed power amplifiers

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Analysis and design of class-B dual fed distributed power amplifiers

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The analysis of, and derivation of design equations for, a class-B balanced single-ended dual-fed distributed amplifier is presented. This approach allows efficient combining of FET output power without multi-way power combiners, has a good port match, and is easy to design as the gate and drain transmission lines are uniform. The design method ensures that all FETs are optimally used and the efficiency is comparable to that of a conventional single-transistor class-B power amplifier using the same FET type. The design method was applied to a class-B four-FET balanced single-ended dual-fed distributed amplifier designed to operate at 1.8 GHz. Large-signal measurements revealed 8% downward shift of the centre frequency. The measured output power and drain efficiency was consistent with the simulations. The efficiency of the amplifier was comparable to a conventional single-transistor class-B power amplifier using the same type of FET.

Inspec keywords: distributed amplifiers; differential amplifiers; microwave amplifiers; UHF power amplifiers; field effect transistors; transmission lines

Other keywords: 1.8 GHz; centre frequency; FET output power; gate transmission lines; balanced amplifiers; drain transmission lines; dual fed distributed power amplifiers; microwave amplifiers; port match; drain efficiency; class-B amplifiers

Subjects: Amplifiers; Other field effect devices; Insulated gate field effect transistors; Solid-state microwave circuits and devices

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