http://iet.metastore.ingenta.com
1887

QUANTUM WELLS IN OPTOELECTRONICS: Laser-induced transient photoconductivity in MQW systems

QUANTUM WELLS IN OPTOELECTRONICS: Laser-induced transient photoconductivity in MQW systems

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
IEE Proceedings J (Optoelectronics) — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

In the interpretation of laser-induced transient photoconductivity a number of effects have to be taken into account. The most important of these are considered to be those associated with excitons, degeneracy, photon recycling, mobility variations and the nonuniformity of carrier injection. These effects are discussed and modifications are made, by including the boson character of the exciton and its four-fold spin degeneracy, to the theory of radiative recombination. A simple estimate of the effect of photon recycling in thin MQWs is given. The density dependence of mobility in an electron-hole plasma is argued to be small, except when higher subbands become populated or the quantum wells become full. In the latter case saturation of the photoconductivity, which can occur at low laser intensities with nonuniform injection, is expected. The importance of both the exponential decay in the degenerate regime and the observed intensity dependence of the initial amplitude is emphasised.

References

    1. 1)
      • S. Schmitt-Rink , C. Ell . Excitons and electron-hole plasma in quasi-2D systems. J. Lumin. , 585 - 596
    2. 2)
      • J. Shah . Photoexcited hot carriers: from cw to 6 fs in 20 years. Solid State Electron , 1051 - 1056
    3. 3)
      • B.K. Ridley . Kinetics of radiative recombination in quantum well. Phys. Rev. , 12190 - 12196
    4. 4)
      • P.T. Landsberg , W. Paul . (1982) Semiconductor statistics, Handbook of semiconductors.
    5. 5)
      • P. Asbeck . Self-absorption effects on the radiative lifetime in GaAs-GaAlAs double heterostructures. J. Appl. Phys. , 820 - 822
    6. 6)
      • N. Raj , D.R. Tilley . Transverse surface and slab-modes in semiconductor superlattices. Solid State Commun. , 373 - 376
    7. 7)
      • J. Lee , H.N. Spector , V.K. Arora . Impurity scattering limited mobility in a quantum well heterojunction. J. Appl. Phys. , 6995 - 7004
    8. 8)
      • B.K. Ridley . Charged impurity scattering in GaInAs FETs. Solid State Electron , 111 - 116
    9. 9)
      • P.J. Bishop , M.E. Daniels , B.K. Ridley , S.J. Bass , L.L. Taylor . Photoconductivity measurement of the electron mobility in an electron-hole plasma. Semicond. Sci. Technol. , 631 - 634
http://iet.metastore.ingenta.com/content/journals/10.1049/ip-j.1991.0051
Loading

Related content

content/journals/10.1049/ip-j.1991.0051
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address