Impurity induced disordering in InGaAs/InGaAlAs quantum wells using implanted fluorine and boron

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Impurity induced disordering in InGaAs/InGaAlAs quantum wells using implanted fluorine and boron

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© The Institution of Electrical Engineers
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Impurity induced disordering of an InGaAs/InGaAlAs quantum well structure has been investigated using boron and fluorine. The impurities were introduced by ion implantation and followed by thermal annealing. Small blue shifts in the exciton peak were observed in the boron implanted material. Much larger blue shifts, over 40 meV, were observed in the fluorine implanted material. At annealing temperatures greater than 650°C, red shifts in the exciton peak of unimplanted material were measured.

Inspec keywords: aluminium compounds; semiconductor quantum wells; impurity and defect absorption spectra of inorganic solids; excitons; ion implantation; indium compounds; III-V semiconductors; gallium arsenide

Other keywords: exciton peak; optical modulators; implanted material; photoluminescence; blue shifts; red shifts; annealing temperatures; ion implantation; thermal annealing; 650 degC; InGaAs-InGaAlAs; quantum wells; impurity induced disordering; IOE

Subjects: Semiconductor junctions; Excitons and related phenomena; Doping and implantation of impurities; Visible and ultraviolet spectra of tetrahedrally bonded nonmetals; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Semiconductor doping

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