Spectral gain measurements for semiconductor laser diodes

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Spectral gain measurements for semiconductor laser diodes

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© The Institution of Electrical Engineers
Published

Spectral gain studies were carried out for two different laser diode structures from the recordings of Fabry-Perot modes. The Cassidy method [1] was found to be superior to other methods for determining gain and for application even at laser threshold. Maximum gain versus current values were derived for both AlGaAs/ GaAs and InGaAsP/InP lasers, and showed good agreement with published theoretical values [2, 3].

Inspec keywords: gallium compounds; semiconductor junction lasers; indium compounds; laser variables measurement; III-V semiconductors; gain measurement; gallium arsenide; aluminium compounds

Other keywords: semiconductor laser diodes; Cassidy method; maximum gain versus current; spectral gain measurement; InGaAsP-InP; laser threshold; AlGaAs-GaAs; Fabry-Perot modes

Subjects: Laser beam characteristics and interactions; Lasing action in semiconductors; Laser beam interactions and properties; Optical variables measurement; Semiconductor lasers

References

    1. 1)
      • Mengel, F.: `Experimental investigation of semiconductor lasers for optical fibre communications', 1978, Ph.D. thesis, .
    2. 2)
      • C.H. Henry , R.A. Logan , H. Temkin , F.R. Merritt . Absorption, emission, and gain spectra of 1.3 μm InGaAsP quaternary lasers. IEEE J. Quantum Electron , 941 - 946
    3. 3)
      • D.K. Dutta . Calculated absorption, emission, and gain inInGaAsP. J. Appl. Phys. , 6095 - 6100
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      • L.D. Westbrook . Measurements of dg/dN and dn/dN and their dependence on photon energy in λ= 1.5 m InGaAsP laser diodes. IEE Proc. Part J , 2 , 135 - 142
    5. 5)
      • D.T. Cassidy . Technique for measurement of the gain of semiconductor diode laser. J. Appl. Phys. , 3096 - 3099
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      • B.W. Hakki , T.L. Paoli . Gain spectra in GaAs double-heterostructure injection lasers. J. Appl. Phys. , 1299 - 1306
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      • N.K. Dutta . Gain-current relation for InGaAsP lasers. J. Appl. Phys. , 55 - 60
    8. 8)
      • Garrett, B., Glew, R.W., Thrush, E.J., Whiteaway, J.E.A.: `Design, fabrication and characterisation of (AlGa)As/GaAs multi-quantum well, separately confined heterostructure lasers grown by MOCVD', Digest No. 128, IEE Colloquium Multi-quantum well devices — physics, engineering and applications, 1986, London, United Kingdom, p. 7/1–6.
    9. 9)
      • K.Y. Lau , P.L. Derry , A. Yariv . Ultimate limit in low threshold quantum well GaAlAs semiconductor lasers. Appl. Phys. Lett. , 88 - 90
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