Spectral gain measurements for semiconductor laser diodes

Spectral gain measurements for semiconductor laser diodes

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
IEE Proceedings J (Optoelectronics) — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Spectral gain studies were carried out for two different laser diode structures from the recordings of Fabry-Perot modes. The Cassidy method [1] was found to be superior to other methods for determining gain and for application even at laser threshold. Maximum gain versus current values were derived for both AlGaAs/ GaAs and InGaAsP/InP lasers, and showed good agreement with published theoretical values [2, 3].


    1. 1)
      • D.T. Cassidy . Technique for measurement of the gain of semiconductor diode laser. J. Appl. Phys. , 3096 - 3099
    2. 2)
      • D.K. Dutta . Calculated absorption, emission, and gain inInGaAsP. J. Appl. Phys. , 6095 - 6100
    3. 3)
      • Garrett, B., Glew, R.W., Thrush, E.J., Whiteaway, J.E.A.: `Design, fabrication and characterisation of (AlGa)As/GaAs multi-quantum well, separately confined heterostructure lasers grown by MOCVD', Digest No. 128, IEE Colloquium Multi-quantum well devices — physics, engineering and applications, 1986, London, United Kingdom, p. 7/1–6.
    4. 4)
      • K.Y. Lau , P.L. Derry , A. Yariv . Ultimate limit in low threshold quantum well GaAlAs semiconductor lasers. Appl. Phys. Lett. , 88 - 90
    5. 5)
      • N.K. Dutta . Gain-current relation for InGaAsP lasers. J. Appl. Phys. , 55 - 60
    6. 6)
      • L.D. Westbrook . Measurements of dg/dN and dn/dN and their dependence on photon energy in λ= 1.5 m InGaAsP laser diodes. IEE Proc. Part J , 2 , 135 - 142
    7. 7)
      • B.W. Hakki , T.L. Paoli . Gain spectra in GaAs double-heterostructure injection lasers. J. Appl. Phys. , 1299 - 1306
    8. 8)
      • C.H. Henry , R.A. Logan , H. Temkin , F.R. Merritt . Absorption, emission, and gain spectra of 1.3 μm InGaAsP quaternary lasers. IEEE J. Quantum Electron , 941 - 946
    9. 9)
      • Mengel, F.: `Experimental investigation of semiconductor lasers for optical fibre communications', 1978, Ph.D. thesis, .

Related content

This is a required field
Please enter a valid email address