Modified 1.3 μm buried ridge stripe laser for implanted-FET integration

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Modified 1.3 μm buried ridge stripe laser for implanted-FET integration

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© The Institution of Electrical Engineers
Published

The buried-ridge stripe (BRS) laser has been modified for integration purposes. Adapting the laser to a quasi-planar configuration on the semi-insulating substrate, we report on an important improvement of the integrable BRS laser characteristics as compared with previously published ones. Also, the technology for this modified structure is shown to be compatible with the implanted transistor technology. No significant effect on the laser characteristics has been seen after Si implantation and subsequent heat treatment at 850°C for 10 s. A threshold current as low as 9.5 mA and an optical bandwidth of 6.1 GHz have been obtained in the case of Si implantation carried out after laser fabrication.

Inspec keywords: III-V semiconductors; gallium arsenide; semiconductor junction lasers; integrated optoelectronics; gallium compounds; ion implantation; indium compounds

Other keywords: implanted-FET integration; 6.1 GHz; threshold current; 1.3 micron; semi-insulating substrate; heat treatment; InP:Si; InGaAsP-InP; ion implantation; optical bandwidth; semiconductor laser; quasi-planar configuration; buried ridge stripe laser; 9.5 mA

Subjects: Semiconductor lasers; Semiconductor doping; Design of specific laser systems; Integrated optoelectronics; Lasing action in semiconductors

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