Influence of gain nonlinearities on the linewidth enhancement factor in semiconductor lasers

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Influence of gain nonlinearities on the linewidth enhancement factor in semiconductor lasers

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Nonlinear gain saturation is shown to result in a power dependence of the linewidth enhancement factor. This can explain a linewidth rebroadening or saturation at high power levels in semiconductor lasers, even if no side modes are considered.

Inspec keywords: spectral line breadth; semiconductor junction lasers; laser theory

Other keywords: nonlinear gain saturation; gain nonlinearities; Fabry Perot laser; linewidth enhancement factor; power dependence; linewidth rebroadening; semiconductor lasers

Subjects: Semiconductor lasers; Lasing action in semiconductors

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