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Nonlinear gain saturation is shown to result in a power dependence of the linewidth enhancement factor. This can explain a linewidth rebroadening or saturation at high power levels in semiconductor lasers, even if no side modes are considered.
References
-
-
1)
-
K. Kobayashi ,
I. Mito
.
Single frequency and tunable laser diodes.
IEEE J. Lightwave Technol.
,
1623 -
1633
-
2)
-
D. Welford ,
A. Mooradian
.
Observation of linewidth broadening in (GaAl)As diode lasers due to electron number fluctuations.
Appl. Phys. Lett.
,
560 -
562
-
3)
-
R.J. Lang ,
K.J. Vahala ,
A. Yariv
.
The effect of spatially dependent temperature and carrier fluctuation noise in semiconductor lasers.
IEEE J. Quantum. Electron.
,
443 -
451
-
4)
-
U. Kruger ,
K. Petermann
.
The semiconductor laser linewidth due to the presence of side modes.
IEEE J. Quantum Electron.
,
2355 -
2358
-
5)
-
S. Ogita ,
Y. Kotaki ,
M. Matsuda ,
Y. Kuwahara ,
H. Ishikawa
.
Long-cavity, multiple-phase-shift, distributed feedback laser for linewidth narrowing.
Electron. Lett.
,
629 -
630
-
6)
-
C.B. Su
.
Nonlinear gain caused by cavity standing wave dielectric grating as an explanation of the relationship between resonance frequency and damping rate of semiconductor diode lasers.
Appl. Phys. Lett.
,
950 -
952
-
7)
-
M.P. Kesler ,
I.P. Ippen
.
Subpicosecond gain dynamics in GaAlAs laser diodes.
Appl. Phys. Lett.
,
1765 -
1767
-
8)
-
D.R. Helme ,
A.R. Mickleson
.
Gain nonlinearities due to carrier density dependent dispersion in semiconductor lasers.
IEEE J. Quantum Electron.
,
1625 -
1631
-
9)
-
K. Vahala ,
A. Yariv
.
Semiclassical theory of noise in semi-conductor lasers — Part II.
IEEE J. Quantum Electron.
,
1102 -
1109
-
10)
-
C.H. Henry
.
Phase noise in semiconductor lasers.
IEEE J. Lightwave Technol.
,
298 -
311
-
11)
-
G.P. Agrawal
.
Spectral hole-burning and gain saturation in semiconductor lasers: Strong-signal theory.
J. Appl. Phys.
,
4 ,
1232 -
1235
-
12)
-
M. Asada ,
Y. Suematsu
.
Density-matrix theory of semiconductor lasers with relaxation broadening model-gain and gain suppresssion in semiconductor lasers.
IEEE J. Quantum Electron.
,
434 -
442
-
13)
-
R. Tucker
.
High-speed modulation of semiconductor lasers.
IEEE J. Lightwave Technol.
,
1180 -
1192
-
14)
-
J.M. Wiesenfeld ,
R.S. Tucker ,
P.M. Downey
.
Picosecond measurement of chirp in gain-switched, single-mode injection lasers.
Appl. Phys. Lett.
,
1307 -
1309
-
15)
-
P. Vankwikelberge ,
G. Morthier ,
R. Baets
.
, A new longitudinal, multi-mode model for the analysis of the static, dynamic and stochastic behaviour of diode lasers with distributed feed-back.
-
16)
-
C. Park ,
J. Buus
.
, Prediction of the linewidth floor in DFB-lasers.
-
17)
-
G.P. Agrawal
.
Intensity dependence of the linewidth enhancement factor and its implications for semiconductor lasers.
IEEE Photonics Technol. Lett.
,
212 -
214
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